Abstract: A composition comprises a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate and at least one planar semiconductor nanowire epitaxially disposed on the substrate, where the nanowire is aligned along a crystallographic direction of the substrate parallel to the crystallographic plane. To fabricate a planar semiconductor nanowire, at least one nanoparticle is provided on a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate. The semiconductor substrate is heated within a first temperature window in a processing unit. Semiconductor precursors are added to the processing unit, and a planar semiconductor nanowire is grown from the nanoparticle on the substrate within a second temperature window. The planar semiconductor nanowire grows in a crystallographic direction of the substrate parallel to the crystallographic plane.

Abstract: A composition comprises a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate and at least one planar semiconductor nanowire epitaxially disposed on the substrate, where the nanowire is aligned along a crystallographic direction of the substrate parallel to the crystallographic plane. To fabricate a planar semiconductor nanowire, at least one nanoparticle is provided on a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate. The semiconductor substrate is heated within a first temperature window in a processing unit. Semi-conductor precursors are added to the processing unit, and a planar semiconductor nanowire is grown from the nanoparticle on the substrate within a second temperature window. The planar semiconductor nanowire grows in a crystallographic direction of the substrate parallel to the crystallographic plane.

Abstract: A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

Abstract: A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.