Abstract: Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.

Abstract: An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.

Abstract: A staircase avalanche photodiode with a staircase multiplication region composed of an AlInAsSb alloy. The photodiode includes a buffer layer adjacent to a substrate and an avalanche multiplication region adjacent to the buffer layer, where the avalanche multiplication region includes a graded AlInAsSb alloy grown lattice-matched or psuedomorphically strained on either InAs or GaSb. The photodiode further includes a photoabsorption layer adjacent to the avalanche multiplication region, where the photoabsorption layer is utilized for absorbing photons. By utilizing AlInAsSb in the multiplication region, the photodiode exhibits a direct bandgap over a wide range of compositions as well as exhibits large conduction band offsets much larger than the smallest achievable bandgap and small valance band offsets. Furthermore, the photodiode is able to detect extremely weak light with a high signal-to-noise ratio.

Abstract: An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.

Abstract: A staircase avalanche photodiode with a staircase multiplication region composed of an AlInAsSb alloy. The photodiode includes a buffer layer adjacent to a substrate and an avalanche multiplication region adjacent to the buffer layer, where the avalanche multiplication region includes a graded AlInAsSb alloy grown lattice-matched or psuedomorphically strained on either InAs or GaSb. The photodiode further includes a photoabsorption layer adjacent to the avalanche multiplication region, where the photoabsorption layer is utilized for absorbing photons. By utilizing AlInAsSb in the multiplication region, the photodiode exhibits a direct bandgap over a wide range of compositions as well as exhibits large conduction band offsets much larger than the smallest achievable bandgap and small valance band offsets. Furthermore, the photodiode is able to detect extremely weak light with a high signal-to-noise ratio.