Abstract: A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.

Abstract: There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.

Abstract: There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.

Abstract: There is provided a film-forming surface reforming method that comprises the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, amine, amino compound or their derivative into contact with a film-forming surface before an insulating film is formed on the film-forming surface of a substrate, and

Abstract: This invention is directed to a method for reforming an undercoating surface prior to the formation of a film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. It effects the reform of the surface by forming an undercoating insulating film on a substrate prior to the formation of film and exposing the surface of the undercoating insulating film to plasma gas.

Abstract: There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

Abstract: The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas which contains ozone (O.sub.3) in oxygen (O.sub.2) and tetraethylorthosilicate (TEOS). The substrate surface cleaning method comprises the steps of oxidizing particles 13 by contacting a pre-process gas containing ozone 15 to a surface 12 of a substrate 11 on which the particles 13 are present, and removing the particles 13 by heating the substrate 11 to exceed a decomposition point of oxide 13a of the particles 13.

Abstract: A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.