Patents by Inventor Setsuo Andoh

Setsuo Andoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615477
    Abstract: Provided is a differential signal transmission cable, a multi-core cable, and a method of manufacturing a differential signal transmission cable that can suppress an increase in differential-to-common mode conversion quantity. The differential signal transmission cable includes two signal lines, an insulation layer covering a periphery of the two signal lines, and a plating layer covering the insulation layer. Differential-to-common mode conversion quantity of the differential signal transmission cable has a maximum value of ?26 dB or less, in a frequency band of 50 GHz or less. In the method of manufacturing a differential signal transmission cable, dry ice blasting is performed on an outer peripheral surface of the insulation layer, and then corona discharge exposure is performed on the outer peripheral surface.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: April 7, 2020
    Assignee: HITACHI METALS, LTD.
    Inventors: Kazufumi Suenaga, Setsuo Andoh, Hisashi Tate, Yuju Endo, Takahiro Sugiyama
  • Publication number: 20190013559
    Abstract: Provided is a differential signal transmission cable, a multi-core cable, and a method of manufacturing a differential signal transmission cable that can suppress an increase in differential-to-common mode conversion quantity. The differential signal transmission cable includes two signal lines, an insulation layer covering a periphery of the two signal lines, and a plating layer covering the insulation layer. Differential-to-common mode conversion quantity of the differential signal transmission cable has a maximum value of ?26 dB or less, in a frequency band of 50 GHz or less. In the method of manufacturing a differential signal transmission cable, dry ice blasting is performed on an outer peripheral surface of the insulation layer, and then corona discharge exposure is performed on the outer peripheral surface.
    Type: Application
    Filed: April 27, 2018
    Publication date: January 10, 2019
    Inventors: Kazufumi Suenaga, Setsuo Andoh, Hisashi Tate, Yuju Endo, Takahiro Sugiyama
  • Patent number: 9350011
    Abstract: This secondary battery negative electrode material constitutes an active material layer formed on a current collector layer of a secondary battery negative electrode and includes a Si particle and a coating material containing Ni and P, formed to cover a surface of the Si particle.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: May 24, 2016
    Assignees: HITACHI METALS, LTD., TOTTORI UNIVERSITY
    Inventors: Hiroki Sakaguchi, Hiroyuki Usui, Ryouji Inoue, Setsuo Andoh, Ken Asada
  • Patent number: 8710679
    Abstract: There is a highly reliable semiconductor module having a satisfactory bonding strength in the electrical bonded portion. In the semiconductor module 10, a semiconductor chip 11 is mounted on a circuit board 20. In the circuit board 20, on an insulating ceramic substrate 21 is formed a metal circuit plate 22 on which the semiconductor chip 11 is implemented. The semiconductor chip 11 and metal circuit plate 22 are connected with each other by an aluminum bonding wire 23. In the connected portion between the metal circuit plate 22 and bonding wire 23, a coating layer 24 for excellent conjunction therebetween is mounted. The coating layer 24, as shown in an enlarged diagram, is made up of a nickel (Ni) layer 241, a P-distributed palladium (Pd) layer 242, and an Au layer 243 in increasing order. To the P-distributed Pd layer 242 is added P (phosphorous) and, the P concentration on the Ni layer 241 is higher than that on the Au layer side 243.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: April 29, 2014
    Assignee: Hitachi Metals, Ltd.
    Inventors: Setsuo Andoh, Fumitake Taniguchi
  • Publication number: 20130252094
    Abstract: This secondary battery negative electrode material constitutes an active material layer formed on a current collector layer of a secondary battery negative electrode and includes a Si particle and a coating material containing Ni and P, formed to cover a surface of the Si particle.
    Type: Application
    Filed: May 28, 2013
    Publication date: September 26, 2013
    Applicants: TOTTORI UNIVERSITY, NEOMAX MATERIALS CO., LTD.
    Inventors: Hiroki Sakaguchi, Hiroyuki Usui, Ryouji Inoue, Setsuo Andoh, Ken Asada
  • Patent number: 8119279
    Abstract: This invention provides a casing for storing MEA, which has satisfactory corrosion resistance to formic acid produced in an electrode reaction of MEA. There is also provided a casing formed of a material having the lowest possible specific gravity that can apply a suitable pushing pressure to MEA and a current collector without increasing the thickness dimension and is suitable for a power supply mounted, for example, in small portable electronic equipment. The casing is a casing for use in a fuel battery in which a hydrogen electrode, an oxygen electrode, and a film-electrode joint product formed of a proton conductive film held between the hydrogen electrode and the oxygen electrode are housed within the casing and, in removing water produced in an oxygen electrode reaction, the above water comes into contact with the casing. The casing for a fuel battery comprises a base material (2a) formed of a magnesium alloy and a film (2b) provided on the base material (2a).
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: February 21, 2012
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hidehisa Yamaguchi, Yuji Kawauchi, Setsuo Andoh
  • Publication number: 20100258954
    Abstract: There is a highly reliable semiconductor module having a satisfactory bonding strength in the electrical bonded portion. In the semiconductor module 10, a semiconductor chip 11 is mounted on a circuit board 20. In the circuit board 20, on an insulating ceramic substrate 21 is formed a metal circuit plate 22 on which the semiconductor chip 11 is implemented. The semiconductor chip 11 and metal circuit plate 22 are connected with each other by an aluminum bonding wire 23. In the connected portion between the metal circuit plate 22 and bonding wire 23, a coating layer 24 for excellent conjunction therebetween is mounted. The coating layer 24, as shown in an enlarged diagram, is made up of a nickel (Ni) layer 241, a P-distributed palladium (Pd) layer 242, and an Au layer 243 in increasing order. To the P-distributed Pd layer 242 is added P (phosphorous) and, the P concentration on the Ni layer 241 is higher than that on the Au layer side 243.
    Type: Application
    Filed: December 4, 2008
    Publication date: October 14, 2010
    Applicant: Hitachi Metals, Ltd.
    Inventor: Setsuo ANDOH
  • Publication number: 20090286120
    Abstract: This invention provides a casing for storing MEA, which has satisfactory corrosion resistance to formic acid produced in an electrode reaction of MEA. There is also provided a casing formed of a material having the lowest possible specific gravity that can apply a suitable pushing pressure to MEA and a current collector without increasing the thickness dimension and is suitable for a power supply mounted, for example, in small portable electronic equipment. The casing is a casing for use in a fuel battery in which a hydrogen electrode, an oxygen electrode, and a film-electrode joint product formed of a proton conductive film held between the hydrogen electrode and the oxygen electrode are housed within the casing and, in removing water produced in an oxygen electrode reaction, the above water comes into contact with the casing. The casing for a fuel battery comprises a base material (2a) formed of a magnesium alloy and a film (2b) provided on the base material (2a).
    Type: Application
    Filed: September 15, 2006
    Publication date: November 19, 2009
    Applicant: Hitachi Metals Ltd
    Inventors: Hidehisa Yamaguchi, Yuji Kawauchi, Setsuo Andoh