Patents by Inventor Setsuo Andou
Setsuo Andou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9514887Abstract: An object of the present invention is to provide an aluminum foil that can make a positive electrode current collector thinner for size reduction and higher energy density of electrical storage devices, be produced easily and has a low surface resistance. An aluminum foil of the present invention as a means for achieving the object is characterized in that carbonaceous particles are dispersed and supported therein. The aluminum foil with carbonaceous particles dispersed and supported therein of the present invention can be produced by electrolysis.Type: GrantFiled: November 11, 2010Date of Patent: December 6, 2016Assignee: HITACHI METALS, LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Patent number: 9267216Abstract: A method for producing an aluminum foil of the present invention is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by the general formula: R1R2R3R4N.X (R1 to R4 independently represent an alkyl group and are the same as or different from one another, and X represents a counteranion for the quaternary ammonium cation), then the film is separated from the substrate to obtain an aluminum foil, and the obtained aluminum foil is subjected to a heat treatment.Type: GrantFiled: November 10, 2011Date of Patent: February 23, 2016Assignee: HITACHI METALS LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Patent number: 9219279Abstract: An object of the present invention is to provide a method for producing a high-ductility, high-purity aluminum foil at a high film formation rate by electrolysis using a plating solution having a low chlorine concentration. A method for producing an aluminum foil of the present invention as a means for achieving the object is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution at least containing (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by a general formula: R1R2R3R4N.X (wherein R1 to R4 independently represent an alkyl group and X represents a counteranion for the quaternary ammonium cation), and then the film is removed from the substrate.Type: GrantFiled: June 28, 2010Date of Patent: December 22, 2015Assignee: HITACHI METALS, LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Patent number: 8586196Abstract: A plating film is provided with enough hardness before anodic oxidation, which is hard to be damaged during handling, and also the production method of the plating film. This problem can be solved by an aluminum plating film with aluminum concentration of 98 wt. % or lower, and with a Vickers hardness of 250 or higher. The hardness is increased by containing oxygen, carbon, sulfur, and a halogen element as impurities. The impurity concentration is controlled by adjusting the current density, the plating temperature, or the plating bath composition.Type: GrantFiled: August 6, 2012Date of Patent: November 19, 2013Assignee: Hitachi Metals, Ltd.Inventors: Hiroyuki Hoshi, Atsushi Okamoto, Setsuo Andou
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Publication number: 20130224589Abstract: A method for producing an aluminum foil of the present invention is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by the general formula: R1R2R3R4N.X (R1 to R4 independently represent an alkyl group and are the same as or different from one another, and X represents a counteranion for the quaternary ammonium cation), then the film is separated from the substrate to obtain an aluminum foil, and the obtained aluminum foil is subjected to a heat treatment.Type: ApplicationFiled: November 10, 2011Publication date: August 29, 2013Applicant: HITACHI METALS, LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Publication number: 20120298514Abstract: A plating film is provided with enough hardness before anodic oxidation, which is hard to be damaged during handling, and also the production method of the plating film. This problem can be solved by an aluminum plating film with aluminum concentration of 98 wt. % or lower, and with a Vickers hardness of 250 or higher. The hardness is increased by containing oxygen, carbon, sulfur, and a halogen element as impurities. The impurity concentration is controlled by adjusting the current density, the plating temperature, or the plating bath composition.Type: ApplicationFiled: August 6, 2012Publication date: November 29, 2012Applicant: HITACHI METALS, LTD.Inventors: Hiroyuki HOSHI, Atsushi OKAMOTO, Setsuo ANDOU
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Publication number: 20120251879Abstract: An object of the present invention is to provide an aluminum foil that can make a positive electrode current collector thinner for size reduction and higher energy density of electrical storage devices, be produced easily and has a low surface resistance. An aluminum foil of the present invention as a means for achieving the object is characterized in that carbonaceous particles are dispersed and supported therein. The aluminum foil with carbonaceous particles dispersed and supported therein of the present invention can be produced by electrolysis.Type: ApplicationFiled: November 11, 2010Publication date: October 4, 2012Applicant: HITACHI METALS, LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Patent number: 8262893Abstract: A plating film is provided with enough hardness before anodic oxidation, which is hard to be damaged during handling, and also the production method of the plating film. This problem can be solved by an aluminum plating film with aluminum concentration of 98 wt. % or lower, and with a Vickers hardness of 250 or higher. The hardness is increased by containing oxygen, carbon, sulfur, and a halogen element as impurities. The impurity concentration is controlled by adjusting the current density, the plating temperature, or the plating bath composition.Type: GrantFiled: June 25, 2007Date of Patent: September 11, 2012Assignee: Hitachi Metals, Ltd.Inventors: Hiroyuki Hoshi, Atsushi Okamoto, Setsuo Andou
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Publication number: 20120088153Abstract: An object of the present invention is to provide a method for producing a high-ductility, high-purity aluminum foil at a high film formation rate by electrolysis using a plating solution having a low chlorine concentration. A method for producing an aluminum foil of the present invention as a means for achieving the object is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution at least containing (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by a general formula: R1R2R3R4N.X (wherein R1 to R4 independently represent an alkyl group and X represents a counteranion for the quaternary ammonium cation), and then the film is removed from the substrate.Type: ApplicationFiled: June 28, 2010Publication date: April 12, 2012Applicant: HITACHI METALS, LTD.Inventors: Atsushi Okamoto, Hiroyuki Hoshi, Setsuo Andou
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Publication number: 20090301886Abstract: A plating film is provided with enough hardness before anodic oxidation, which is hard to be damaged during handling, and also the production method of the plating film. This problem can be solved by an aluminum plating film with aluminum concentration of 98 wt. % or lower, and with a Vickers hardness of 250 or higher. Here, by containing oxygen, carbon, sulfur, and a halogen element as impurities, the hardness becomes higher. The impurity concentration is controlled by adjusting the current density, the plating temperature, or the plating bath composition.Type: ApplicationFiled: June 25, 2007Publication date: December 10, 2009Applicant: Hitachi Metals, Ltd.Inventors: Hiroyuki Hoshi, Atsushi Okamoto, Setsuo Andou