Abstract: The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber (1) a power source side electrode (3) connected to a power source (6) for the PBII apparatus and a grounding side electrode (4) opposed to the power source side electrode (3). A base material (2) is disposed on one of the power source side electrode (3) and the grounding side electrode (4). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material (2) and the electrode where the base material (2) is not disposed to form the amorphous carbon film on a surface of the base material (2).

Abstract: The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber (1) a power source side electrode (3) connected to a power source (6) for the PBII apparatus and a grounding side electrode (4) opposed to the power source side electrode (3). A base material (2) is disposed on one of the power source side electrode (3) and the grounding side electrode (4). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material (2) and the electrode where the base material (2) is not disposed to form the amorphous carbon film on a surface of the base material (2).

Abstract: A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon single crystal substrate formed with the high impurity concentration layer in an atmosphere containing oxygen to form an oxide film on the surface of the single crystal substrate and make the high impurity concentration layer resistant to etching; masking all of the oxide film surface other than that at the center region on the surface opposite from that implanted with boron ions and then exposing the high impurity concentration layer by high-speed mask etching followed by selective etching; and removing the oxide film.