Patents by Inventor Setsuo Okamoto
Setsuo Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5952086Abstract: A titanium target for sputtering high in film making efficiency in a contact hole. The crystallization on the target face is caused to be orientated so that the X-ray diffraction strength of the (10 -10) and/or (11 -20) vertical to the close-packed filling face may become 1.1 times or more in a case of the random orientation, and the X-ray diffraction strength of the (0002) parallel to the close-packed filling face may become 1 time or lower in a case of the random orientation. A direction of the sputter grains jumping out of the target face is controlled in a direction vertical to the target face.Type: GrantFiled: November 12, 1996Date of Patent: September 14, 1999Assignee: Sumitomo Sitix of Amagasaki, Inc.Inventors: Takashi Ohnishi, Yasunori Yoshimura, Setsuo Okamoto
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Patent number: 5683505Abstract: A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an apparatus including a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a conical shaped heat resistant and heat insulating component below the protective gas inlet pipe.Type: GrantFiled: February 27, 1996Date of Patent: November 4, 1997Assignee: Sumitomo Sitix CorporationInventors: Kaoru Kuramochi, Setsuo Okamoto
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Patent number: 5611857Abstract: A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.Type: GrantFiled: June 7, 1995Date of Patent: March 18, 1997Assignee: Sumitomo Sitix CorporationInventors: Yoshihiro Akashi, Kaoru Kuramochi, Setsuo Okamoto, Yasuji Tsujimoto, Makoto Ito
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Patent number: 5575847Abstract: This invention relates to the apparatus and the process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The apparatus is provided with a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a cylindrical shaped heat resistant and heat insulating component below the protective gas inlet pipe noted above.Type: GrantFiled: November 8, 1994Date of Patent: November 19, 1996Assignee: Sumitomo Sitix CorporationInventors: Kaoru Kuramochi, Setsuo Okamoto
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Patent number: 5551978Abstract: An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.Type: GrantFiled: April 14, 1995Date of Patent: September 3, 1996Assignee: Sumitomo Sitix CorporationInventors: Yoshihiro Akashi, Kaoru Takiuchi, Setsuo Okamoto
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Patent number: 5477806Abstract: A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the crucible to the molten liquid layer is controlled. Accordingly, silicon single crystals of the low concentration of oxygen are produced.Type: GrantFiled: March 21, 1994Date of Patent: December 26, 1995Assignee: Sumitomo Sitix CorporationInventors: Yoshihiro Akashi, Setsuo Okamoto, Kaoru Kuramochi, Takayuki Kubo
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Patent number: 5474019Abstract: A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.Type: GrantFiled: October 13, 1994Date of Patent: December 12, 1995Assignee: Sumitomo Sitix CorporationInventors: Yoshihiro Akashi, Kaoru Kuramochi, Setsuo Okamoto, Yasuji Tsujimoto, Makoto Ito
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Patent number: 5435263Abstract: An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.Type: GrantFiled: March 23, 1994Date of Patent: July 25, 1995Assignee: Sumitomo Sitix CorporationInventors: Yoshihiro Akashi, Kaoru Takiuchi, Setsuo Okamoto
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Patent number: 4225565Abstract: In the treating of waste slags produced in the desulfurization and/or dephosphorization of molten pig iron with alkali carbonates, the alkali is recovered by extracting said waste slags with hot water while feeding carbon dioxide gas to form an extraction solution having a pH of 9.0-11.5 and recovering alkali carbonates from said extraction solution. The extraction solution contains little sulphur and silicates, from which alkali carbonates can be easily recovered with high yield therefrom.Type: GrantFiled: January 25, 1979Date of Patent: September 30, 1980Assignees: Tokuyama Soda Company Limited, Sumitomo Metal Industries LimitedInventors: Katsukiyo Marukawa, Setsuo Okamoto, Kazunari Yamada, Masahisa Iba