Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

Abstract: A light emitting display device includes a substrate that includes a first pixel, a second pixel, a third pixel, and an infrared ray emission portion, the first pixel, the second pixel, and the third pixel representing different colors, a first electrode on the substrate, a second electrode that overlaps the first electrode, an emission layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the emission layer. The emission layer may include a first emission layer in the first pixel and an infrared ray emission layer in the infrared ray emission portion, the auxiliary layer may include a first auxiliary layer in the first pixel, and the infrared ray emission layer and the first auxiliary layer may include the same material.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: Described herein is a highly efficient light emitting device.

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Abstract: A composition for enhancing sweetness includes glycan or glycopeptide derived from soy sauce. The composition has excellent sweetness enhancing properties, and particularly has a sweetening effect nearly the same as or better than those of conventional sweeteners and less calories in terms of nutritional characteristics. A sweetener composition includes the composition for enhancing sweetness and a sweetener. A food includes the composition for enhancing sweetness. A method for enhancing sweetness of a food, includes applying the sweetness enhancer composition to the food. The sweetness enhancer of the present invention is a natural product-derived substance, and contains, as an active ingredient, peptide separated from Korean traditional soy sauce aged over a long period of time, and therefore, may solve problems of conventional chemosynthesized sweetness enhancers, for example, side effects, foul taste or the like.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

Abstract: An electronic device and method are disclosed, including a first communication module configured to perform a cellular communication, a second communication module configured to perform a communication to connect the electronic device to an external electronic device, and at least one processor electrically connected to the first and second communication modules, executing the method, which includes activating the first communication module in response to detecting a preset condition, and transmitting a signal requesting call forwarding via the first communication module.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Abstract: A dual display including: a first display for displaying first visual information and receiving a touch input; a second display including a double-sided emission display for displaying second visual information through a first surface or a second surface opposite to the first surface, and receiving a touch input; a sensor for sensing relative locations of the first and second displays; and a controller for determining whether or not the second display is covering the first display according to a signal of the sensor, and for controlling the first and second displays. Here, the controller is configured to receive the touch input from the second display when the second display unit covers the first display, and to receive the touch input from the first display when the second display does not to cover the first display.