Abstract: A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

Abstract: A method of manufacturing a thermochromic substrate, with which transmittance can be increased. The method includes the steps of forming a first thin film as a coating on a base substrate, the refractive index of the first thin film being different from that of a VO2 thin film; forming a pre-thermochromic thin film by coating the first thin film with pure vanadium; forming a second thin film as a coating on the pre-thermochromic thin film, the refractive index of the second thin film being different from that of a VO2 thin film; and heat-treating a resultant stack that includes the base substrate, the first thin film, the pre-thermochromic thin film and the second thin film.

Abstract: A thermochromic window that can effectively insulate heat when warming is conducted in winter. The thermochromic window that includes a substrate, a thermochromic thin film formed on the substrate, and a transparent conductive film formed on at least one surface of the upper surface and the undersurface of the thermochromic thin film. The emissivity of the transparent conductive film is lower than the emissivity of the thermochromic thin film.

Abstract: A thermochromic window, the sunlight transmittance of which is adjustable depending on the temperature, and a method of fabricating the same. The thermochromic window includes a flexible substrate, a thermochromic thin film disposed on the flexible substrate, and a hot-processed substrate bonded to the thermochromic thin film.

Abstract: A thermochromic window that can effectively insulate heat when warming is conducted in winter. The thermochromic window that includes a substrate, a thermochromic thin film formed on the substrate, and a transparent conductive film formed on at least one surface of the upper surface and the undersurface of the thermochromic thin film. The emissivity of the transparent conductive film is lower than the emissivity of the thermochromic thin film.

Abstract: A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted.