Patents by Inventor Seul Gi YUN

Seul Gi YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 11476341
    Abstract: A semiconductor device is provided.
    Type: Grant
    Filed: November 27, 2020
    Date of Patent: October 18, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Youn Kim, Sang Jung Kang, Jin Woo Kim, Seul Gi Yun
  • SEMICONDUCTOR DEVICE
    Publication number: 20210328030
    Abstract: A semiconductor device is provided.
    Type: Application
    Filed: November 27, 2020
    Publication date: October 21, 2021
    Inventors: Ju Youn KIM, Sang Jung KANG, Jin Woo KIM, Seul Gi YUN
  • Semiconductor device
    Patent number: 10553693
    Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: February 4, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se Ki Hong, Ju Youn Kim, Jin-Wook Kim, Tae Eung Yoon, Tae Won Ha, Jung Hoon Seo, Seul Gi Yun
  • SEMICONDUCTOR DEVICE
    Publication number: 20190131417
    Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.
    Type: Application
    Filed: April 20, 2018
    Publication date: May 2, 2019
    Inventors: Se Ki HONG, Ju Youn KIM, Jin-Wook KIM, Tae Eung YOON, Tae Won HA, Jung Hoon SEO, Seul Gi YUN