Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming stair-like structures with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming stair-like structures on a substrate includes forming a film stack including a dielectric layer and a ruthenium containing material, and etching the ruthenium containing material in the film stack exposed by a patterned photoresist layer utilizing a first etching gas mixture comprising an oxygen containing gas.