Abstract: The present invention relates to a method and apparatus for handling personal data in a machine-to-machine (M2M) system, and an operation method of an M2M device includes obtaining information related to consent of a user for personal data provided from an Internet of things (IoT) device and creating a consent-related resource based on the information. The resource includes at least one attribute related to the consent.

Abstract: Disclosed herein are a cooperative driving method based on driving negotiation and an apparatus for the same. The cooperative driving method is performed by a cooperative driving apparatus for cooperative driving based on driving negotiation, and includes determining whether cooperative driving is possible in consideration of a driving mission of a requesting vehicle that requests cooperative driving with neighboring vehicles, when it is determined that cooperative driving is possible, setting a responding vehicle from which cooperative driving is to be requested among the neighboring vehicles, performing driving negotiation between the requesting vehicle and the responding vehicle based on a driving negotiation protocol, and when the driving negotiation is completed, performing cooperative driving by providing driving guidance information for vehicle control to at least one of the requesting vehicle and the responding vehicle.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: Disclosed herein are an apparatus and a method for autonomous vehicle negotiation based on Vehicle-to-Vehicle (V2V) communication, the method including requesting, by vehicles that enter a driving negotiation section, a driving negotiation token, acquiring, by a vehicle that enters the driving negotiation section first, among the entering vehicles, the driving negotiation token, performing driving negotiation based on whether the driving negotiation token is acquired, and returning, by a vehicle having acquired the driving negotiation token, the driving negotiation token when the vehicle arrives at a destination.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: Digital rights management (DRM) in a machine-to-machine (M2M) system, and a method for operating a first device may include: receiving, from a second device, a first message for requesting to create a resource associated with a content under digital rights management (DRM); creating the resource based on the first message; obtaining the content and right information on usage of the content from at least one external server; storing the content and the right information in the resource; and transmitting, to the second device, a second message for notifying creation of the resource.

Abstract: Disclosed herein are an object recognition apparatus of an automated driving system using error removal based on object classification and a method using the same. The object recognition method is configured to train a multi-object classification model based on deep learning using training data including a data set corresponding to a noise class, into which a false-positive object is classified, among classes classified by the types of objects, to acquire a point cloud and image data respectively using a LiDAR sensor and a camera provided in an autonomous vehicle, to extract a crop image, corresponding to at least one object recognized based on the point cloud, from the image data and input the same to the multi-object classification model, and to remove a false-positive object classified into the noise class, among the at least one object, by the multi-object classification model.

Abstract: Embodiments of the present disclosure are directed to forwarding a large amount of data in a machine-to-machine (M2M) system, and a method for operating a first device may include: transmitting, to a second device, a request message for bulk data transfer; and receiving, from the second device, an acknowledgment message for notifying completion of the bulk data transfer, wherein the request message may include at least one of information for identifying data to be included in bulk data, information on a target common service entity (CSE) in a target platform that receives the bulk data, information for indicating processing of source data after the bulk data transfer, and information for accessing the target CSE.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

Abstract: A subscription service including a number of subscriptions possessed by a device is managed in a machine-to-machine (M2M) system. A method for operating a first device may include: transmitting, to a second device, a first message for requesting a new subscription that uses a first resource for managing subscription; receiving, from the second device, a second message for notifying an update of a second resource associated with the new subscription; and identifying a content of the second resource, wherein the first resource may include at least one of a first attribute indicating a number of subscriptions possessed by the first device, a second attribute indicating, among resources to which the first device is subscribing, a number of resources which are updated but not yet retrieved, or a third attribute indicating an access address of a subscribed resource.

Abstract: Disclosed herein is a method and device for identifying a service entity in an Machine-to-Machine (M2M) system. The method for an M2M device for requesting a service includes transmitting a message requesting information on a service entity to a registry, obtaining the information on the service entity and using the service through the service entity.

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

Abstract: A security key is configured to be replaced when a device is replaced in a machine-to-machine (M2M) system. A method for operating a first device may include: receiving a first message including first information associated with security key replacement from a second device or a third device; receiving a third message including second information associated with security key replacement, which is generated based on a second message including a security key replacement indication, from the second device or the third device; and replacing the security key.

Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

Abstract: A method and apparatus for providing an edge transfer according to the movement of a device are provided. The method includes receiving a handover decision and handover information from a network, when a device performs the handover and a network function virtualization instance of the source edge is transferred to the target edge. The method then transfers an M2M service instance of the source edge to an M2M edge node.