Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

Abstract: Provided a source driver integrated circuit (IC) and a display driving device eliminating an existing input pad and internal wiring of a source driver integrated circuit (IC) for receiving a sensing reference voltage from an external voltage source by allowing the sensing reference voltage for initializing pixels during sensing of the pixels to be generated by an internal voltage source, rather than the external voltage source.

Abstract: The present invention relates to: a pyrene derivative compound having a specific structure; and a high efficiency organic light-emitting device employing the pyrene derivative compound in a light emitting layer and thus having excellent light-emitting characteristics. The organic light-emitting device according to the present invention can be configured as a high efficiency organic light-emitting device having excellent light-emitting characteristics by employing the pyrene derivative compound having the specific structure as a host in the light emitting layer, and thus can be usefully applied industrially in lighting devices, as well as various display devices such as flat, flexible, and wearable displays.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: An organic light-emitting device according to the present invention uses a pyrene derivative compound having a characteristic structure as a host in a light-emitting layer to realize a long-lifespan and high-efficiency organic light-emitting device having excellent light-emitting characteristics in terms of lifespan and luminescence efficiency. Accordingly, the organic light-emitting device can be usefully applied, in the industrial aspect, for various display devices such as flat panel, flexible, and wearable displays, as well as lighting devices.

Abstract: A brassiere for radiation therapy is disclosed. The brassiere for radiation therapy according to an embodiment of the present disclosure includes a pair of cups configured to cover breasts of a patient; a coupling member positioned between the pair of cups and configured to couple the pair of cups to each other; back bands configured to be in close contact with a back of the patient; and side compression bands, the side compression bands having one ends coupled to the pair of cups at the coupling member, respectively, and the other ends detachably coupled to the back bands, respectively, wherein positions of the breasts of the patient are changed by adjusting positions on the back bands to which the other ends of side compression bands are coupled.

Abstract: A method of manufacturing a cathode active material for a lithium secondary battery according to embodiments of the present invention includes performing a first heat treatment on a first mixture of a transition metal precursor and a lithium precursor at a first calcination temperature to obtain a preliminary lithium-transition metal composite oxide particle; and performing a second heat treatment on a second mixture obtained by adding the lithium precursor to the preliminary lithium-transition metal composite oxide particle at a second calcination temperature which is lower than the first calcination temperature to form a lithium-transition metal composite oxide particle.

Abstract: The present application relates to a sweetener including an oligosaccharide having increased acid resistance, a food composition including the same, and a method of increasing acid resistance of an oligosaccharide of an oligosaccharide-containing sweetener including applying allulose to the oligosaccharide.

Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: A positive electrode active material including a first lithium composite oxide particle including a secondary particle formed by aggregation of one or more primary particles, and a coating oxide occupying at least a part of at least one of surfaces of the secondary particle, grain boundaries between the primary particles, or surfaces of the primary particles, the positive electrode active material satisfying an equation of 1.3?a/b?3.0, wherein a represents a max peak intensity at 2theta=44.75° to 44.80° and b represents a max peak intensity at 2theta=45.3° to 45.6° in X-ray diffraction (XRD) analysis using Cu K? radiation.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A method of displaying an image in a display device may include determining the degree of deterioration of pixels included in a display unit based on image data of a current frame image, determining a shift route of the current frame image so as to correspond to the determined degree of deterioration. The first image data is corrected to second image data so that the current frame image is shifted along the shift route.

Abstract: Provided are display panel manufacturing method and apparatus. The display panel manufacturing method includes detecting a machining target area of a bottom layer, removing an area, overlapping the machining target area, of a top layer, emitting a laser beam to the machining target area of the bottom layer to provide a bottom pattern from the machining target area, and providing a compensation pattern in the removed area of the top layer.

Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.

Abstract: Electronic devices, displays, and methods are provided for operating an electronic display in coexistence with sensors that could be adversely impacted by the operation of the electronic display. An electronic device may include an electronic display and a sensor. The electronic display may display image content by light emission during an emission period and periodically enter a quiet period in which the light emission of the electronic display is turned off. The sensor may perform sensing operations during the quiet period without interference from the operation of the electronic display.

Abstract: Disclosed is a method for pre-detecting a defective porous polymer substrate for a separator, including selecting a porous polymer substrate having a plurality of pores; observing the selected porous polymer substrate with a scanning electron microscope (SEM) to obtain an image of the porous polymer substrate; quantifying the average value of pore distribution index (PDI); correcting the quantified average value of pore distribution index to obtain the corrected average value of pore distribution index; determining whether or not the corrected average value of pore distribution index is 60 a.u. (arbitrary unit) or less; and classifying the porous polymer substrate as a good product, when the corrected average value of pore distribution index is determined to be 60 a.u. or less, and classifying the porous polymer substrate as a defective product, when the corrected average value of pore distribution index is determined to be larger than 60 a.u.

Abstract: The present disclosure relates to a pixel sensing circuit which extends an operation section of an integrator by using an additional signal and allows securing a time required for a stable output of a sensing voltage.

Abstract: The present invention relates to a novel heterocyclic compound usable in an organic light-emitting device and to an organic light-emitting device comprising same, wherein [chemical formula A] is as described in the detailed description of the invention.