Abstract: Disclosed herein is a method and apparatus for manufacturing a panel for a vehicle. When a steel sheet is machined to form a panel for a vehicle, a blanking-texturing machine conducts a blanking process for cutting the steel sheet and a texturing process for forming depressions in the steel sheet at the same time. Therefore, the present invention reduces the number of manufacturing processes, thus enhancing the productivity, and reducing the production cost and provides a steel sheet with uniform depressions across the surface of the steel sheet, thereby reducing the coefficient of friction during the pressing process consistently.

Abstract: The present invention relates to a method for recrystallizing fine spherical cyclotrimethylenetrinitramine (Research Department Explosive, hereinafter, referred to as “RDX”) particles, and the method for recrystallizing fine spherical RDX particles according to the present invention may include (a) introducing a powder material containing RDX into a container, (b) introducing a dimethylether compressed gas into the container and dissolving the RDX to form a RDX solution, (c) releasing and decompressing the RDX solution into atmospheric pressure to form crystallized RDX particles, and (d) separating and collecting the RDX particles.

Abstract: The present invention relates to a method and an apparatus by which powder is evenly dispersed and is coated on a substrate uniformly and continuously so that a uniform layer may be formed. More specifically the present invention provides a method and an apparatus for forming a coating layer that powder is coated on an entire surface of a substrate uniformly and continuously, regardless of the material or the size of the substrate, as a uniform amount of powder entrained on the carrier air which is generated by carrier air and powder transported to a carrier pipe at a certain rate is consistently fed in to a nozzle, regardless of the size, morphology, and specific weight of the powder particles.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

Abstract: The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

Abstract: A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.

Abstract: Thermoplastic resin compositions are provided. A heat-resistant ABS thermoplastic resin composition including a graft ABS polymer, an ?-methylstyrene copolymer, an imide-substituted copolymer, and an additive for improving elongation and impact strength is excellent in weld strength, chemical resistance, impact strength, and elongation. A thermoplastic resin composition including a graft ABS polymer, a ?-methylstyrene copolymer, and an additive for improving wettability is excellent in weld strength and wettability.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

Abstract: The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.

Abstract: Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.

Abstract: Disclosed herein are a nitride semiconductor light emitting device and a method of manufacturing the same. The nitride semiconductor light emitting device comprises a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.

Abstract: Disclosed are a GaN-based semiconductor light emitting diode, in which transmittance of electrodes is improved and high-quality Ohmic contact is formed, and a method for manufacturing the same, thus improving luminance and driving voltage properties. The GaN-based semiconductor light emitting diode includes: a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; and an alloy layer formed on the upper clad layer, and made of a hydrogen-storing alloy. The GaN-based semiconductor light emitting diode improves a luminance property and reduces Ohmic resistance, thus obtaining high-quality Ohmic contact.