Patents by Inventor SEUNG-CHEOL HAN

SEUNG-CHEOL HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250153546
    Abstract: Disclosed is a thermal management system for a vehicle, the thermal management system including a refrigerant line in which a refrigerant circulates, the refrigerant line having a closed loop including a compressor, a condensing core, an expansion valve, and an evaporation core, a first coolant line in which a coolant flows while circulating between the evaporation core and an electronic component of a vehicle, a second coolant line in which the coolant flows while circulating between the condensing core and a radiator, and a fluid line in which a non-conductive fluid flows while circulating between an interior air conditioning part and the condensing core or the evaporation core, in which a heating core of the interior air conditioning part and a battery are connected, and the non-conductive fluid is introduced into a battery housing and is in direct thermal conduction with a battery cell.
    Type: Application
    Filed: December 16, 2022
    Publication date: May 15, 2025
    Inventors: Seung Cheol Han, Byeong Jin Shin, Do Yeop Kim, Geon Eung Lee, Sang Dae Kim, Dong Dae Park
  • Publication number: 20250046912
    Abstract: A battery case and a heat management system for a battery module having the battery case, in which the battery case ensures airtightness allowing a liquid immersion cooling method based on a nonconductive refrigerant to be used in managing the heat of the battery module, and the internal temperature of the battery case and the level of the nonconductive refrigerant are controlled to remain constant so as to keep the battery cell below an ignition point, thereby preventing a fire from breaking out.
    Type: Application
    Filed: December 26, 2022
    Publication date: February 6, 2025
    Inventors: Seung Cheol HAN, Byeong Jin SHIN, Do Yeop KIM, Geon Eung LEE, Sang Dae KIM, Dong Dae PARK
  • Patent number: 10490285
    Abstract: A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data.
    Type: Grant
    Filed: April 21, 2015
    Date of Patent: November 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangyong Yoon, Donghun Kwak, Kitae Park, Myung-Hoon Choi, Seung-Cheol Han
  • Patent number: 9958845
    Abstract: A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: May 1, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Goeun Jung, Kyungryun Kim, Sangyong Yoon, Seung-Cheol Han
  • Patent number: 9928902
    Abstract: In a method of operating a storage device including at least one nonvolatile memory device and a memory controller configured to control the at least one nonvolatile memory device, a boundary page of a first memory block among a plurality of memory blocks included in the at least one nonvolatile memory device is searched for, at least one clean page, in which data is not written, of the first memory block is searched for, a dummy program operation is performed on a portion of the boundary page and the at least one clean page, and an erase operation is performed on the first memory block.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: March 27, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-Soo Kwon, Seung-Cheol Han, Sang-Won Hwang
  • Publication number: 20170169883
    Abstract: In a method of operating a storage device including at least one nonvolatile memory device and a memory controller configured to control the at least one nonvolatile memory device, a boundary page of a first memory block among a plurality of memory blocks included in the at least one nonvolatile memory device is searched for, at least one clean page, in which data is not written, of the first memory block is searched for, a dummy program operation is performed on a portion of the boundary page and the at least one clean page, and an erase operation is performed on the first memory block.
    Type: Application
    Filed: December 14, 2016
    Publication date: June 15, 2017
    Inventors: JOON-SOO KWON, Seung-Cheol Han, Sang-Won Hwang
  • Publication number: 20160033976
    Abstract: A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.
    Type: Application
    Filed: March 4, 2015
    Publication date: February 4, 2016
    Inventors: GOEUN JUNG, KYUNGRYUN KIM, SANGYONG YOON, SEUNG-CHEOL HAN
  • Publication number: 20150332777
    Abstract: A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data.
    Type: Application
    Filed: April 21, 2015
    Publication date: November 19, 2015
    Inventors: SANGYONG YOON, DONGHUN KWAK, KITAE PARK, MYUNG-HOON CHOI, SEUNG-CHEOL HAN