Abstract: A method for fabricating a semiconductor device includes loading a substrate into a process chamber, processing the substrate in the process chamber, using a plasma generated inside the process chamber, receiving a plasma light emitted from the plasma, selecting a target light from the plasma light, such that the target light is related to a surface condition of the substrate, and analyzing an intensity of the target light over time to monitor the surface condition of the substrate.

Abstract: Provided are a die pickup module and a die bonding apparatus including the same. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die ejector arranged under the dicing tape and for separating a die to be picked up from the dicing tape, a non-contact picker for picking up the die in a non-contact manner so as not to contact a front surface of the die, a vacuum gripper for partially vacuum adsorbing a rear surface of the die picked up by the non-contact picker and an inverting driving unit for inverting the vacuum gripper to invert the die so that a rear surface of the die gripped by the vacuum gripper faces upward.

Abstract: A bonding stage is provided. The bonding stage includes a first heater disposed under a first region of a substrate having a plurality of semiconductor chips disposed thereon, a second heater disposed under a second region different from the first region of the substrate, a cooler disposed under the first heater and the second heater and blocking heat of the first heater and heat of the second heater from being transferred to lower portions of the first heater and the second heater, and a thin plate disposed on the first heater and the second heater to support the substrate and transferring the heat of the first heater and the heat of the second heater to the substrate, wherein the first heater and the second heater are independently operated.

Abstract: A bonding stage is provided. The bonding stage includes a first heater disposed under a first region of a substrate having a plurality of semiconductor chips disposed thereon, a second heater disposed under a second region different from the first region of the substrate, a cooler disposed under the first heater and the second heater and blocking heat of the first heater and heat of the second heater from being transferred to lower portions of the first heater and the second heater, and a thin plate disposed on the first heater and the second heater to support the substrate and transferring the heat of the first heater and the heat of the second heater to the substrate, wherein the first heater and the second heater are independently operated.

Abstract: A bonding head and a die bonding apparatus having the same are disclosed. The bonding head includes a body connected to a driving section for transferring the die, a plate heater mounted to a lower surface of the body and a collet mounted to a lower surface of the plate heater and configured to hold the die using a vacuum pressure. A cooling channel is formed at the lower surface of the body, and cooling passages are formed through the body and connected with the cooling channel to supply a cooling fluid into the cooling channel and to recover the cooling fluid from the cooling channel thereby cooling the plate heater.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.

Abstract: A semiconductor chip bonding apparatus includes a bonding head to adsorptively pick up a semiconductor chip, a bonding stage supporting a substrate, the semiconductor chip to be bonded to the substrate on the bonding stage, a first camera to capture an image of the semiconductor chip and to obtain positional information regarding the semiconductor chip, a second camera to capture an image of the substrate and to obtain positional information regarding the substrate, a correction device structure at a first side surface of the bonding stage, the correction device structure including a correction substrate and at least one correction chip, and a bonding controller to control pick up of the at least one correction chip by the bonding head, mounting of the at least one correction chip on the correction substrate, and correcting of a bonding position.

Abstract: A semiconductor chip bonding apparatus includes a bonding head to adsorptively pick up a semiconductor chip, a bonding stage supporting a substrate, the semiconductor chip to be bonded to the substrate on the bonding stage, a first camera to capture an image of the semiconductor chip and to obtain positional information regarding the semiconductor chip, a second camera to capture an image of the substrate and to obtain positional information regarding the substrate, a correction device structure at a first side surface of the bonding stage, the correction device structure including a correction substrate and at least one correction chip, and a bonding controller to control pick up of the at least one correction chip by the bonding head, mounting of the at least one correction chip on the correction substrate, and correcting of a bonding position.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.

Abstract: A bonding head and a die bonding apparatus having the same are disclosed. The bonding head includes a body connected to a driving section for transferring the die, a plate heater mounted to a lower surface of the body and a collet mounted to a lower surface of the plate heater and configured to hold the die using a vacuum pressure. A cooling channel is formed at the lower surface of the body, and cooling passages are formed through the body and connected with the cooling channel to supply a cooling fluid into the cooling channel and to recover the cooling fluid from the cooling channel thereby cooling the plate heater.

Abstract: A bonding apparatus includes at least one stage unit to support a circuit board having a chip thereon and a bonding unit coupled to the stage unit to define a chamber. The bonding unit has at least one inductive heater to heat to bond the chip to the circuit board, and the stage unit includes a vacuum generator configured to generate a vacuum between the stage unit and the circuit board. The vacuum is used to hold the circuit board on the stage unit during bonding of the chip to the circuit board. The induction heater may include one or more induction heating antennas, and the chamber may include one or more stage units.

Abstract: It is an aspect of the present invention to provide a wafer bonding apparatus having a pressing apparatus configured to press wafers fixed in a fixing apparatus, wherein the fixing apparatus is configured to allow the pressing apparatus to press the wafers without interference. The wafer bonding apparatus may include an upper wafer and a lower wafer, a support member configured to support the upper wafer and the lower wafer, a push member on the upper wafer, and a fixing apparatus configured to fix the push member to the support member, wherein the push member includes a fixing part extending outward from a periphery of the upper wafer, and the fixing apparatus is coupled to the fixing part. It is also an aspect of the present invention to provide a method for bonding wafers.