Abstract: A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a reacting chamber to deposit a small amount of HSG nuclei on a conductive layer pattern of a capacitor electrode during a step of stabilizing the substrate temperature. After the substrate temperature is stabilized, a larger amount of source gas is introduced into the chamber to form additional HSG nuclei. Thereafter, a step of annealing is performed to form the HSG layer.

Abstract: The present invention provides a thin film deposition apparatus that prevent a wafer from the thermal budget so as to form a thin film without any damages. The thin film deposition apparatus includes a chamber where a wafer is loaded; a gas supplier containing a plurality of gases, the gas supplier connected with the chamber through at least a gas inflow pipe so as to supplying the plurality of gases into the chamber; an airtight reaction room in the chamber where the plurality of gases are reaction with one another so as to form a thin film on the wafer; and a gas pre-treatment device in the gas supplier, the gas pre-treatment device thermal-treating at least one of the plurality of gases at a temperature in the range of more than 300 to less than 2000 degrees centigrade; wherein the gas pre-treatment device is connected to at least a connecting pipe.