Patents by Inventor Seung-Geun YU

Seung-Geun YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11616197
    Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: March 28, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ja Bin Lee, Zhe Wu, Kwangmin Park, Gwangguk An, Dongho Ahn, Seung-Geun Yu, Jinwoo Lee
  • Patent number: 11245073
    Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: February 8, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Geun Yu, Zhu Wu, Ja Bin Lee, Jung Moo Lee, Jinwoo Lee, Kyubong Jung
  • Patent number: 11211427
    Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: December 28, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinwoo Lee, Zhe Wu, Kyubong Jung, Seung-geun Yu, Ja Bin Lee
  • Publication number: 20210193922
    Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.
    Type: Application
    Filed: August 10, 2020
    Publication date: June 24, 2021
    Inventors: Ja Bin Lee, Zhe Wu, Kwangmin Park, Gwangguk An, Dongho Ahn, Seung-Geun Yu, Jinwoo Lee
  • Publication number: 20200365801
    Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Inventors: SEUNG-GEUN YU, ZHU WU, JA BIN LEE, JUNG MOO LEE, JINWOO LEE, KYUBONG JUNG
  • Patent number: 10777745
    Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: September 15, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Geun Yu, Zhu Wu, Ja Bin Lee, Jung Moo Lee, Jinwoo Lee, Kyubong Jung
  • Patent number: 10763511
    Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: September 1, 2020
    Assignees: TOHOKU TECHNO ARCH CO., LTD., TPR CO., LTD.
    Inventors: Hidemi Kato, Seung-Geun Yu, Takeshi Wada
  • Publication number: 20200091234
    Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.
    Type: Application
    Filed: April 17, 2019
    Publication date: March 19, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinwoo LEE, Zhe WU, Kyubong JUNG, Seung-geun YU, Ja Bin LEE
  • Publication number: 20200075853
    Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
    Type: Application
    Filed: March 26, 2019
    Publication date: March 5, 2020
    Inventors: SEUNG-GEUN YU, ZHU WU, JA BIN LEE, JUNG MOO LEE, JINWOO LEE, KYUBONG JUNG
  • Patent number: 10403900
    Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: September 3, 2019
    Assignees: TOHOKU TECHNO ARCH CO., LTD., TPR INDUSTRY CO., LTD
    Inventors: Hidemi Kato, Seung-Geun Yu, Takeshi Wada
  • Publication number: 20190058197
    Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.
    Type: Application
    Filed: October 23, 2018
    Publication date: February 21, 2019
    Applicants: TOHOKU TECHNO ARCH CO., LTD., TPR INDUSTRY CO., LTD
    Inventors: Hidemi KATO, Seung-Geun YU, Takeshi WADA
  • Publication number: 20170225955
    Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.
    Type: Application
    Filed: September 4, 2015
    Publication date: August 10, 2017
    Applicants: TOHOKU TECHNO ARCH CO., LTD., TPR INDUSTRY CO., LTD.
    Inventors: Hidemi KATO, Seung-Geun YU, Takeshi WADA