Abstract: A display device having active level shift (ALS) lines and ALS drivers connected to the ALS lines removed from the display device, and a gate line at a rear end pixel area is used instead of the ALS line to obtain the effect of the ALS lines. Accordingly, a pixel aperture ratio may be increased and a width of an outer black matrix may be reduced.

Abstract: A semiconductor device includes a semiconductor layer over a substrate. The semiconductor layer changes direction at least twice and has at least two different widths in the same plane. The length of a current path through the semiconductor layer is greater than a shortest path through the semiconductor layer in the same plane.

Abstract: A thin film transistor (TFT) comprises: an active layer formed on a substrate; a gate insulating layer formed on the active layer; a gate electrode including a first gate region and a second gate region formed on portions of the gate insulating layer and spaced apart with a separation region interposed therebetween; an interlayer insulating layer formed on the gate insulating layer and the gate electrode, and having an opening formed to expose portions of the gate insulating layer and the gate electrode around the separation region; a gate connection electrode formed on the interlayer insulating layer and connected to the first gate region and the second gate region through the opening; and source and drain electrodes formed on the interlayer insulating layer. The TFT and the OLED display device have excellent driving margin without a spatial loss.

Abstract: Provided are a liquid crystal display, a method of estimating ambient light, and a driving method of the liquid crystal display. The liquid crystal display includes a first electrode and a second electrode generating an electric field, liquid crystal molecules the orientation state of which is changed by the generated electric field, and a photodetector sensing the light passing through the liquid crystal molecules.

Abstract: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: A method of driving a display panel includes sequentially applying a gate signal to a plurality of gate lines of the display panel during each frame period of a plurality of frame periods, applying data voltages to a plurality of data lines of the display panel, and applying a common voltage to the display panel, a polarity of the common voltage being inverted periodically and asynchronously with a frame period of the frame periods.

Abstract: A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract: An array substrate includes an active layer including a channel region, a gate electrode positioned corresponding to the channel region, and a gate insulating film between the active layer and the gate electrode. The gate electrode includes a transparent conductive film and an opaque conductive film, and the transparent conductive film is between the channel region and the opaque conductive film.

Abstract: An organic light emitting diode display includes: first gate wires provided on a substrate with a first insulation layer therebetween and extended in a first direction; second gate wires provided on a second insulation layer above the first insulation layer and extended in the first direction; data wires provided on a third insulation layer above the second insulation layer and extended in a second direction crossing the first direction; a pixel circuit connected to the first gate wires, the second gate wires, and the data wires; and an organic light emitting diode connected to the pixel circuit.

Abstract: A thin film transistor (TFT) comprises; an active layer formed on a substrate; a gate insulating layer formed on the active layer; a gate electrode including a first gate region and a second gate region, formed on portions of the gate insulating layer and spaced apart with a separation region interposed therebetween; an interlayer insulating layer formed on the gate insulating layer and the gate electrode, and having an opening formed to expose portions of the gate insulating layer and the gate electrode around the separation region; a gate connection electrode formed on the interlayer insulating layer and connected to the first gate region and the second gate region through the opening; and source and drain electrodes formed on the interlayer insulating layer. The TFT and the OLED display device have excellent driving margin without a spatial loss.

Abstract: A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.

Abstract: A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.

Abstract: A method of driving a display panel includes sequentially applying a gate signal to a plurality of gate lines of the display panel during each frame period of a plurality of frame periods, applying data voltages to a plurality of data lines of the display panel, and applying a common voltage to the display panel, a polarity of the common voltage being inverted periodically and asynchronously with a frame period of the frame periods.

Abstract: A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced.

Abstract: An apparatus for driving a display device includes a plurality of stage connected to each other, wherein each stage includes first to seventh transistors and first and second capacitors, the seventh transistor is connected to one terminal of the first capacitor, and a ratio of an area of the first capacitor to a channel width of the seventh transistor is less than 40. Accordingly, since the ratio of the area of the capacitor to the channel width of the transistor is less than 40, deterioration may be remarkably reduced in a low temperature test.

Abstract: A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced.

Abstract: A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.