Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract: A system and method of reducing spin pumping induced damping of a free layer of a memory device is disclosed. The memory device includes an anti-ferromagnetic material (AFM) pinning layer in contact with a bit line access electrode. The memory device also includes a pinned layer in contact with the AFM pinning layer, a tunnel barrier layer in contact with the pinned layer, and a free layer in contact with the tunnel barrier layer. The memory device includes a spin torque enhancing layer in contact with the free layer and in contact with an access transistor electrode. The spin torque enhancing layer is configured to substantially reduce spin pumping induced damping of the free layer.

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.

Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.

Abstract: Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract: A method includes sensing a state of a data cell to generate a data voltage. The state of the data cell corresponds to a state of a programmable resistance based memory element of the data cell. The method further includes sensing a state of a reference cell to generate a reference voltage. The state of the data cell and the state of the reference cell are sensed via a common sensing path. The method further includes determining a logic value of the data cell based on the data voltage and the reference voltage.

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract: A monolithic multi-channel resistive memory includes at least one first bank associated with a first channel and tuned according to first device attributes and/or first circuit attributes. The memory also includes at least one second bank associated with a second channel and tuned according to second device attributes and/or second circuit attributes.

Abstract: A magnetic tunnel junction storage element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) bit cell includes a bottom electrode layer, a pinned layer adjacent to the bottom electrode layer, a dielectric layer encapsulating a portion of the bottom electrode layer and the pinned layer, the dielectric layer including sidewalls that define a hole adjacent to a portion of the pinned layer, a tunneling barrier adjacent to the pinned layer, a free layer adjacent to the tunneling barrier, and a top electrode adjacent to the free layer, wherein a width of the bottom electrode layer and/or the pinned barrier in a first direction is greater than a width of a contact area between the pinned layer and the tunneling barrier in the first direction. Also a method of forming an STT-MRAM bit cell.

Abstract: In a particular embodiment, a method includes controlling a temperature within a chamber while applying a magnetic field. A device including a memory array is located in the chamber. The method includes applying a magnetic field to the memory array and testing the memory array during application of the magnetic field to the memory array at a target temperature.

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract: An apparatus includes a group of data cells and a reference cell coupled to the group of data cells. The reference cell includes four magnetic tunnel junction (MTJ) cells.

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract: A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current.