Patents by Inventor Seung H. Park
Seung H. Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11672105Abstract: In one example, a heat pipe is configured to absorb and transfer heat away from ambient air of a data center to cool the ambient air circulating in the data center to cool devices of the data center, and a fluid interface is thermally coupled to the heat pipe and configured to cool the heat pipe via a coolant fluid circulating in the data center. In another example, a heat pipe configured to release transferred heat to air, and a fluid interface is thermally coupled to the heat pipe and configured to exchange heat to the heat pipe to cool a coolant fluid circulating in a data center to cool devices of the data center.Type: GrantFiled: December 18, 2020Date of Patent: June 6, 2023Assignee: Meta Platforms, Inc.Inventors: Seung H. Park, Marco Antonio Magarelli, Veerendra Prakash Mulay, David Abad Cenizal, Jacob Na, Sarah E. Hanna
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Publication number: 20210227725Abstract: In one example, a heat pipe is configured to absorb and transfer heat away from ambient air of a data center to cool the ambient air circulating in the data center to cool devices of the data center, and a fluid interface is thermally coupled to the heat pipe and configured to cool the heat pipe via a coolant fluid circulating in the data center. In another example, a heat pipe configured to release transferred heat to air, and a fluid interface is thermally coupled to the heat pipe and configured to exchange heat to the heat pipe to cool a coolant fluid circulating in a data center to cool devices of the data center.Type: ApplicationFiled: December 18, 2020Publication date: July 22, 2021Inventors: Seung H. Park, Marco Antonio Magarelli, Veerendra Prakash Mulay, David Abad Cenizal, Jacob Na, Sarah E. Hanna
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Patent number: 10817035Abstract: A control logic firmware is received at a power supply unit. The firmware specifies a configuration selected to place a magnitude of an impedance of the power supply unit above a magnitude of an impedance of a network data center power system. The control logic firmware is executed using a power factor correction circuit of the power supply unit including by setting a voltage loop phase margin of the power factor correction circuit to maintain the magnitude of the impedance of the power supply unit above the magnitude of the impedance of the network data center power system.Type: GrantFiled: October 19, 2018Date of Patent: October 27, 2020Assignee: Facebook, Inc.Inventors: Michael Timothy Kauffman, Mingchun Xu, Seung H. Park
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Patent number: 10188013Abstract: A data-center-module deployment apparatus may include a gantry robot adapted to move a sliding element parallel to a face of an information technology rack, where the face of the information technology rack exposes information technology device modules stored by the information technology rack. The apparatus may also include at least one track that is coupled to the sliding element and that extends away from the sliding element and toward the face of the information technology rack. In addition to the track(s), the apparatus may include an engaging element that is adapted to move along the track(s) and to engage with one or more of the information technology device modules stored by the information technology rack, such that the engaging element is adapted to insert into the information technology rack and remove from the information technology rack one or more of the plurality of information technology device modules.Type: GrantFiled: October 9, 2017Date of Patent: January 22, 2019Assignee: Facebook, Inc.Inventors: Andrew Gold, Scott C. Wiley, Marco Antonio Magarelli, Seung H. Park
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Patent number: 9887096Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.Type: GrantFiled: May 15, 2015Date of Patent: February 6, 2018Assignee: Applied Materials, Inc.Inventors: Seung H. Park, Yunyu Wang, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle
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Publication number: 20150249018Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.Type: ApplicationFiled: May 15, 2015Publication date: September 3, 2015Inventors: Seung H. Park, Yunyu Wang, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle
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Patent number: 9034770Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.Type: GrantFiled: March 15, 2013Date of Patent: May 19, 2015Assignee: Applied Materials, Inc.Inventors: Seung H. Park, Yunyu Wang, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle
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Publication number: 20140080309Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.Type: ApplicationFiled: March 15, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Seung H. Park, Yunyu Wang, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle
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Patent number: 5552899Abstract: The invention disclosed relates to a facsimile transmission/reception method and apparatus using a common bus in an office automation system, and in detail to a facsimile transmission/reception method and apparatus using a single common bus for transmitting and receiving data and control signals to be interfaced with the outer devices.The apparatus comprises a decoding means 31 being applied with a scanning output data chip selection signal CS1 and a liquid crystal display chip selection signal CS2 for decoding a corresponding selection output signal, a selection output means 34,35 controlled by a first and second storage means 32 and 33 latching data, control signals and the like and the decoding means for selectively outputting the data latched by the first and the second storage means, and a common bus 37 for transmitting the data outputted by the selection output means to the operation panel unit 40.Type: GrantFiled: March 24, 1994Date of Patent: September 3, 1996Assignee: Hyundai Electronics, Ind Co. Ltd.Inventors: Seung H. Park, Jin S. Park, Jun M. Kim
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Patent number: 5453848Abstract: An image processing apparatus useful in, for example, FAX machines, for processing a binary or multiple level tone data in an image including a switch for selectively outputting either a binary level or the multiple level tone pattern in accordance with a selection signal the state of which is determined by the interline reading interval times while scanning the image on an original document.Type: GrantFiled: March 25, 1994Date of Patent: September 26, 1995Assignee: Hyundai Electronics IndustriesInventors: Seung H. Park, Jin S. Park, Jun M. Kim
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Patent number: 5089744Abstract: A magnetron choke for microwave ovens has a tube member having its wall divided into two side walls of different heights respectively on each side of slots in the tube wall to provide two resonant points for suppressing harmonics in a wider range of frequency bands. Another tube member arranged on the bottom of the former can suppress frequency further in a wider range.Type: GrantFiled: May 22, 1990Date of Patent: February 18, 1992Assignee: Goldstar Co., Ltd.Inventor: Seung H. Park