Abstract: A chassis cab vehicle includes a lower frame, which constitutes a lower structure of the vehicle and is equipped with a pair of side members extending in a lengthwise direction of the vehicle. A battery is coupled between the side members. An upper body is coupled to a front portion of the lower frame and forms a cabin interior. A side sill is formed at a lower end at each side of the upper body and extends to a rear side of the cabin interior. The side sills overlap the respective side members in a lateral direction of the vehicle when coupled to the lower frame.

Abstract: A frame structure for a vehicle includes: an inner panel connected to a side member and defining an inner side of a rear part of the side member; an outer panel connected to a rear side of the side member and coupled to an outer side of the inner panel defining a closed cross-section together with the inner panel and defining an outer side of the rear part of the side member; an opening portion formed below the inner and outer panels partially opening the closed cross-section so that a front end of a rear suspension arm can be inserted into the opening portion; and a reinforcing member disposed in the opening portion defining the closed cross-section together with the outer panel and the inner panel and configured to close an internal space in the outer and inner panels.

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method according to the present disclosure is performed by an image decoding apparatus. The image decoding method may comprise deriving a prediction sample of a current block based on motion information of the current block, determining whether prediction refinement with optical flow (PROF) applies to the current block, deriving, based on that the PROF applies to the current block, a difference motion vector for each sample position in the current block, deriving a gradient for each sample position in the current block, deriving a PROF offset based on the difference motion vector and the gradient, and deriving a refined prediction sample for the current block based on the PROF offset.

Abstract: A method of detecting coordinates of a mark is provided. The method includes: providing a plurality of structures and the mark on a wafer, each of the plurality of structures including a plurality of mold insulating layers and a plurality of mold sacrificial layers, which are alternately stacked, an end of each of the plurality of structures including a portion having a stair shape, and the mark being between adjacent structures among the plurality of structures; forming a photoresist layer on the plurality of structures and the mark, the photoresist layer including a portion concave toward the wafer between the adjacent structures; detecting the coordinates of the mark by irradiating a beam to the mark; determining an offset of the coordinates of the mark based on a beam path changing factor; and correcting the coordinates of the mark based on the offset.

Abstract: A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

Abstract: A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

Abstract: Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

Abstract: Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.