Abstract: A thin film transistor array panel according to an exemplary embodiment of the invention includes: an insulating substrate; a gate line disposed on the insulating substrate and including a gate pad portion; a data line insulated from and crossing the gate line, and including a source electrode and a data pad portion; a drain electrode facing the source electrode; an organic insulating layer disposed on the data line and the drain electrode, and including a first contact hole; a common electrode disposed on the organic insulating layer, and including a second contact hole; a passivation layer disposed on the common electrode, and including a third contact hole; and a pixel electrode disposed on the passivation layer, and being in contact with the drain electrode, in which the third contact hole is disposed to be adjacent to one surface of the first contact hole for improvement of an aperture ratio and a stable electrode connection.

Abstract: A stretchable encapsulant according to the present invention includes a wrinkle part having a stretchable wrinkle structure; and a packaging part being in close contact with the wrinkle part and configured to wrap the wrinkle part, wherein the wrinkle part has a multi-layered structure wherein an organic material and an inorganic material are mutually laminated. According to such a configuration, high stretchability and low gas and moisture permeability due to the composite structure of the organic and inorganic materials of the multi-layered structure together with high stretchability due to the hierarchical structure can be provided.

Abstract: A multi-scaled oxygen storage material wherein cobalt element is complexed with a size of an atom or hundreds of nanometers or smaller in a ceria-zirconia solid solution and a method for preparing the same as provided. Specifically, the multi-scaled oxygen storage material contains a ceria-zirconia solid solution, a cobalt doping contained in the solid solution in the form of an atom and a cobalt-based nanocluster dispersed in the solid solution as cobalt oxide and exhibits a microstructure distinguished from that of the existing ceria-zirconia (CZO)-based oxygen storage material as well as remarkably improved oxygen storage and release ability, and the method for preparing the same is provided.

Abstract: A multi-scaled oxygen storage material wherein cobalt element is complexed with a size of an atom or hundreds of nanometers or smaller in a ceria-zirconia solid solution and a method for preparing the same are provided. Specifically, The multi-scaled oxygen storage material contains a ceria-zirconia solid solution, a cobalt dopping contained in the solid solution in the form of an atom and a cobalt-based nanocluster dispersed in the solid solution as cobalt oxide and exhibits a microstructure distinguished from that of the existing ceria-zirconia (CZO)-based oxygen storage material as well as remarkably improved oxygen storage and release ability, and the method for preparing the same is provided.