Abstract: The present application relates to a composition for freeze-preserving microalgae belonging to the family Thraustochytriaceae and a method for freeze-preserving microalgae belonging to the family Thraustochytriaceae using same. By the composition for freeze-preserving microalgae belonging to the family Thraustochytriaceae according to an aspect and the method for freeze-preserving microalgae belonging to the family Thraustochytriaceae using same, the microalgae may be stored stably for a long period of time, and the costs for preservation of the microalgae may be reduced by shortening a process. In addition, according to a method for preparing freeze-dried biomass of microalgae belonging to the family Thraustochytriaceae using the composition, even during long-term storage at room temperature, freeze-dried biomass in the form of powder that can maintain bacterial activity and is easy for storage and transportation may be manufactured through a simple process.

Abstract: A reference voltage generator includes a constant voltage generator suitable for using a high voltage as a first power supply voltage and for generating a constant voltage, and a first reference voltage generating unit suitable for using the constant voltage as a second power supply voltage and for generating a first reference voltage.

Abstract: A semiconductor device may include a control signal generation block configured to shift a level of a trimming signal and generate a selection control signal, and shift a level of a first enable signal and generate a driving control signal, when an internal voltage is raised to a level greater than a sensing reference voltage after an initialization period is ended. The semiconductor device may include an internal voltage generation block configured to select one of a plurality of trimming division voltages as a selected reference voltage in response to the selection control signal, and drive the internal voltage by comparing levels of the selected reference voltage and the internal voltage in response to the driving control signal.

Abstract: A semiconductor device may include an internal voltage generation circuit including at least one resistor element and a plurality of MOS transistors, and configured to change amounts of current flowing through the plurality of MOS transistors according to a level of the first node and control driving of an internal voltage. The semiconductor device may include an internal circuit configured to operate by being supplied with the internal voltage. The at least one resistor element is electrically coupled between the internal voltage and a first node. The plurality of MOS transistors are electrically coupled between the at least one resistor element and a power supply voltage.

Abstract: A semiconductor device may include a control signal generation block configured to shift a level of a trimming signal and generate a selection control signal, and shift a level of a first enable signal and generate a driving control signal, when an internal voltage is raised to a level greater than a sensing reference voltage after an initialization period is ended. The semiconductor device may include an internal voltage generation block configured to select one of a plurality of trimming division voltages as a selected reference voltage in response to the selection control signal, and drive the internal voltage by comparing levels of the selected reference voltage and the internal voltage in response to the driving control signal.

Abstract: A voltage trimming circuit of a semiconductor apparatus includes: a first voltage trimming unit configured to trim a first reference voltage having a first characteristic with respect to temperature based on a first trimming signal, and generate a first trimming reference voltage; a second voltage trimming unit configured to trim a second reference voltage having a second characteristic with respect to the temperature based on a second trimming signal, and generate a second trimming reference voltage; and an adjusting unit configured to trim a voltage formed from a potential difference between the first and second trimming reference voltages based on a select signal, and generate a final trimming reference voltage.

Abstract: A voltage detection circuit includes a voltage detection unit suitable for comparing a voltage level of a reference voltage terminal with a voltage level of an internal voltage terminal and for generating a detection signal based on a comparison result, a test reference voltage generating unit suitable for receiving an external reference voltage through a pad and for supplying a test reference voltage, which is generated by using the received external reference voltage, to the reference voltage terminal by using a first input resistance, during a test operation, and a normal reference voltage generating unit having a current mirror structure, wherein the normal reference voltage generating unit is suitable for supplying a current, corresponding to an internal reference voltage, to the reference voltage terminal by using a second input resistance different from the first input resistance, during a normal operation.

Abstract: A reference voltage generator includes a constant voltage generator suitable for using a high voltage as a first power supply voltage and for generating a constant voltage, and a first reference voltage generating unit suitable for using the constant voltage as a second power supply voltage and for generating a first reference voltage.

Abstract: A voltage detection circuit includes a voltage detection unit suitable for comparing a voltage level of a reference voltage terminal with a voltage level of an internal voltage terminal and for generating a detection signal based on a comparison result, a test reference voltage generating unit suitable for receiving an external reference voltage through a pad and for supplying the received external reference voltage to the reference voltage terminal as the reference voltage by using a first input resistance, during a test operation, and a normal reference voltage generating unit having a current mirror structure, wherein the normal reference voltage generating unit is suitable for generating an internal reference voltage, and for supplying the internal reference voltage to the reference voltage terminal as the reference voltage by using a second input resistance different from the first input resistance, during a normal operation.

Abstract: A voltage trimming circuit of a semiconductor apparatus includes: a first voltage trimming unit configured to trim a first reference voltage having a first characteristic with respect to temperature based on a first trimming signal, and generate a first trimming reference voltage; a second voltage trimming unit configured to trim a second reference voltage having a second characteristic with respect to the temperature based on a second trimming signal, and generate a second trimming reference voltage; and an adjusting unit configured to trim a voltage formed from a potential difference between the first and second trimming reference voltages based on a select signal, and generate a final trimming reference voltage.

Abstract: A method for producing L-threonine using a microorganism is provided. In the method, additional one or more copies of each of the phosphoenolpyruvate carboxylase (ppc) gene and the threonine operon are integrated into a particular site of the chromosomal DNA of a microorganism, while its inherent ppc gene and threonine operon remain. Accordingly, two or more ppc genes and threonine operons are included in the chromosomal DNA of the microorganism to thereby enhance the expression of the ppc gene encoding an enzyme to convert phosphoenolpyruvate to a threonine biosynthesis precursor, oxaloacetete, and the genes encoding enzymes involved in the synthetic pathway of threonine from oxaloacetate, including thrA (aspartokinasel-homoserine dehydrogenase), thrB (homoserine kinase), and thrC (threonine synthase), thereby markedly increasing L-threonine productivity.

Abstract: A method of producing L-threonine using a microorganism is provided, one or more copies of each of the phosphoenolpyruvate carboxylase gene and the threonine operon are additionally intedgrated into a particular site of the chromosomal DNA of the microorganism, whiel its inherent phophoenolpyruvate carboxylase gene and threonine operon remain.

Abstract: A method for producing L-threonine using a microorganism is provided. In the method, additional one or more copies of each of the phosphoenolpyruvate carboxylase (ppc) gene and the threonine operon are integrated into a particular site of the chromosomal DNA of a microorganism, while its inherent ppc gene and threonine operon remain. Accordingly, two or more ppc genes and threonine operons are included in the chromosomal DNA of the microorganism to thereby enhance the expression of the ppc gene encoding an enzyme to convert phosphoenolpyruvate to a threonine biosynthesis precursor, oxaloacetete, and the genes encoding enzymes involved in the synthetic pathway of threonine from oxaloacetate, including thrA (aspartokinasel-homoserine dehydrogenase), thrB (homoserine kinase), and thrC (threonine synthase), thereby markedly increasing L-threonine productivity.

Abstract: Disclosed is an improved register circuit of an extended mode register set. The register circuit comprises a first mode register block reset by a reset signal and outputting a predetermined level of signal in the input of an extended mode register set signal; a logic block for generating an output signal by OR operation of the reset signal and the mode register set signal and masking the mode register set signal when the predetermined level of signal is inputted from the first mode register block; and a second mode register block reset by output signal of the logic block.

Abstract: A method for producing L-threonine using a microorganism is provided. In the method, additional one or more copies of each of the phosphoenolpyruvate carboxylase (ppc) gene and the threonine operon are integrated into a particular site of the chromosomal DNA of a microorganism, while its inherent ppc gene and threonine operon remain. Accordingly, two or more ppc genes and threonine operons are included in the chromosomal DNA of the microorganism to thereby enhance the expression of the ppc gene encoding an enzyme to convert phosphoenolpyruvate to a threonine biosynthesis precursor, oxaloacetete, and the genes encoding enzymes involved in the synthetic pathway of threonine from oxaloacetate, including thrA (aspartokinasel-homoserine dehydrogenase), thrB (homoserine kinase), and thrC (threonine synthase), thereby markedly increasing L-threonine productivity.

Abstract: Disclosed is an improved register circuit of an extended mode register set. The register circuit comprises a first mode register block reset by a reset signal and outputting a predetermined level of signal in the input of an extended mode register set signal; a logic block for generating an output signal by OR operation of the reset signal and the mode register set signal and masking the mode register set signal when the predetermined level of signal is inputted from the first mode register block; and a second mode register block reset by output signal of the logic block.

Abstract: A boosting circuit for a high voltage operation in a semiconductor memory device for preventing a transistor of a high voltage pump circuit from being destroyed due to an excessive bootstrap voltage in a pumping operation, by controlling the operation of the high voltage pump circuit according to a signal detecting that the bootstrap voltage of the high voltage pump circuit has increased above a predetermined level.