Patents by Inventor Seung Han Ryu
Seung Han Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088432Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.Type: ApplicationFiled: April 12, 2023Publication date: March 14, 2024Inventors: Kyu Ju Kwak, Won Keun Kim, Eun Ji Kwon, Samuel Seo, Yeon Jong Oh, Kyoung Han Ryu, Dong Hyun Lee, Han Su Kim, Ji Whan Lee, Seong Hoon Choi, Seung Do Mun
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Publication number: 20230238040Abstract: A storage device includes a memory device including a plurality of memory dies; and a memory controller for addressing a memory die among the plurality of memory dies by using an address latch enable (ALE) signal and a command latch enable (CLE) signal, which are input during predetermined N cycles, where N is a natural number, and controlling the memory device such that the one memory die performs a memory operation. The memory controller may address the memory die by addressing a channel among a plurality of channels respectively connected to a plurality of package groups by using a chip enable (CE) signal.Type: ApplicationFiled: June 3, 2022Publication date: July 27, 2023Inventors: Seung Han RYU, In Bo SHIM, Hyeong Rak KIM, Hae Seong JEONG
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Publication number: 20220098463Abstract: A thermal dissipation composite material comprising: a matrix including a polymer material; and composite particles distributed in the matrix, wherein the composite particles include a filler, and a thermally conductive material coated on the surface of the filler by an inorganic coating layer, and wherein the plurality of thermally conductive materials coated by the inorganic coating layer are connected to each other on the surfaces of the plurality of composite particles so as to establish a heat transfer network.Type: ApplicationFiled: December 8, 2021Publication date: March 31, 2022Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Yong Ho Choa, Seung Han Ryu, Min Seob Lim, Hong Baek Cho, Yo Seb Song
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Patent number: 11217368Abstract: Provided are a nanostructure network and a method of fabricating the same. The nanostructure network includes nanostructures having a poly-crystalline structure formed by self-assembly of the nanostructures. The method includes preparing a nanostructure solution in which nanostructures are dispersed in a first solvent, forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent, coating a surface of a substrate with the nanostructure ink, and forming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate.Type: GrantFiled: December 28, 2018Date of Patent: January 4, 2022Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Yong-Ho Choa, Young Tae Kwon, Seung Han Ryu
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Patent number: 10782762Abstract: An electronic device may include a semiconductor memory device, a central processing device that controls an operation of the semiconductor memory device, and a power supply that supplies power to the semiconductor memory device and the central processing device, and the power supply may include a power controller that receives external power and generates an internal voltage and a charge voltage, an auxiliary power unit that is charged by the charge voltage in a normal mode and provides charged power when sudden power loss occurs, and a charge voltage conversion unit that supplies the auxiliary power unit with the charge voltage at a first level in the normal mode, and converts the first level of the charge voltage to a second level higher than the first level and supplies the charge voltage to the auxiliary power unit in a test mode.Type: GrantFiled: September 26, 2018Date of Patent: September 22, 2020Assignee: SK hynix Inc.Inventor: Seung Han Ryu
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Publication number: 20190339761Abstract: An electronic device may include a semiconductor memory device, a central processing device that controls an operation of the semiconductor memory device, and a power supply that supplies power to the semiconductor memory device and the central processing device, and the power supply may include a power controller that receives external power and generates an internal voltage and a charge voltage, an auxiliary power unit that is charged by the charge voltage in a normal mode and provides charged power when sudden power loss occurs, and a charge voltage conversion unit that supplies the auxiliary power unit with the charge voltage at a first level in the normal mode, and converts the first level of the charge voltage to a second level higher than the first level and supplies the charge voltage to the auxiliary power unit in a test mode.Type: ApplicationFiled: September 26, 2018Publication date: November 7, 2019Inventor: Seung Han RYU
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Publication number: 20190139680Abstract: Provided are a nanostructure network and a method of fabricating the same. The nanostructure network includes nanostructures having a poly-crystalline structure formed by self-assembly of the nanostructures. The method includes preparing a nanostructure solution in which nanostructures are dispersed in a first solvent, forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent, coating a surface of a substrate with the nanostructure ink, and forming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Yong-Ho CHOA, Young Tae KWON, Seung Han RYU
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Patent number: 10256396Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.Type: GrantFiled: July 7, 2016Date of Patent: April 9, 2019Assignee: MagnaChip Semiconductor, Ltd.Inventors: Kwan Soo Kim, Dong Joon Kim, Seung Han Ryu, Hee Baeg An, Jong Yeul Jeong, Kyung Soo Kim, Kang Sup Shin
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Publication number: 20170110643Abstract: The present invention relates to a thermoelectric composite in which a thermoplastic polymer constitutes a matrix, and one or more types of electroconductive materials selected from the group consisting of chalcogen materials and chalcogenides are dispersed at grain boundaries between the thermoplastic polymer particles to form a conductive pathway, wherein an average size of the electroconductive materials is smaller than an average size of the thermoplastic polymer particles, the chalcogen materials are one or more substances selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and polonium (Po), the chalcogenides are compounds containing one or more chalcogens selected from the group consisting of S, Se, Te, and Po, and the thermoelectric composite has a thermal conductivity of 0.1 to 0.5 W/m·K. The present invention also relates to a method of preparing the thermoelectric composite.Type: ApplicationFiled: June 4, 2015Publication date: April 20, 2017Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Yong Ho Choa, Seil Kim, Yo Min Choi, Seung Han Ryu
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Publication number: 20160322561Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.Type: ApplicationFiled: July 7, 2016Publication date: November 3, 2016Applicant: Magnachip Semiconductor, Ltd.Inventors: Kwan Soo KIM, Dong Joon KIM, Seung Han RYU, Hee Baeg AN, Jong Yeul JEONG, Kyung Soo KIM, Kang Sup SHIN
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Patent number: 9419206Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.Type: GrantFiled: July 25, 2013Date of Patent: August 16, 2016Assignee: MagnaChip Semiconductor, Ltd.Inventors: Kwan Soo Kim, Dong Joon Kim, Seung Han Ryu, Hee Baeg An, Jong Yeul Jeong, Kyung Soo Kim, Kang Sup Shin
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Patent number: 9018028Abstract: A magnetic sensor and a manufacturing method thereof are provided. The magnetic sensor includes: a substrate comprising a plurality of Hall elements, a protective layer formed on the substrate, a base layer formed on the protective layer, and an integrated magnetic concentrator (IMC) formed on the base layer and comprising a surface with an elevated portion. The base layer has a larger cross-sectional area than the IMC.Type: GrantFiled: August 9, 2013Date of Patent: April 28, 2015Assignee: MagnaChip Semiconductor, Ltd.Inventors: Seung Han Ryu, Jong Yeul Jeong, Kwan Soo Kim
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Publication number: 20140367813Abstract: A magnetic sensor and a manufacturing method thereof are provided. The magnetic sensor includes: a substrate comprising a plurality of Hall elements, a protective layer formed on the substrate, a base layer formed on the protective layer, and an integrated magnetic concentrator (IMC) formed on the base layer and comprising a surface with an elevated portion. The base layer has a larger cross-sectional area than the IMC.Type: ApplicationFiled: August 9, 2013Publication date: December 18, 2014Applicant: MagnaChip Seminconductor, Ltd.Inventors: Seung Han RYU, Jong Yeul JEONG, Kwan Soo KIM
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Publication number: 20140252514Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.Type: ApplicationFiled: July 25, 2013Publication date: September 11, 2014Applicant: MagnaChip Semiconductor, Ltd.Inventors: Kwan Soo KIM, Dong Joon KIM, Seung Han RYU, Hee Baeg AN, Jong Yeul JEONG, Kyung Soo KIM, Kang Sup SHIN
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Patent number: 8599593Abstract: A memory system includes a memory device configured to read control data for operating conditions from a content addressed memory (CAM) block by performing a CAM read operation and to perform a data input/output operation based on the control data and a memory controller configured to store the control data of the memory device and to determine whether the memory device is to perform the CAM read operation by comparing the stored control data with the control data of the memory device when an operating mode of the memory device or the memory controller changes.Type: GrantFiled: July 12, 2011Date of Patent: December 3, 2013Assignee: Hynix Semiconductor Inc.Inventor: Seung Han Ryu
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Publication number: 20120110401Abstract: A semiconductor memory apparatus includes: a first data counting unit configured to count respective programming levels of a plurality of input data and output a plurality of first data counting codes having a code value corresponding to the number of respective programming levels; a data read unit configured to sense data stored in a memory block having the plurality of input data programmed therein, based on a voltage level of a plurality of read bias signals, and output the sensed result as a plurality of output data; a second data counting unit configured to count respective programming levels of the plurality of output data and output a plurality of second data counting codes having a code value corresponding to the number of respective programming levels; a read bias control unit configured to compare the plurality of first data counting codes with the plurality of second data counting codes and output a bias control code having a code value corresponding to the comparison result; and a read bias generaType: ApplicationFiled: December 31, 2010Publication date: May 3, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Seung Han RYU, Beom Ju SHIN, Jung Woo LEE, Myeong Woon JEON
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Publication number: 20120057389Abstract: A memory system includes a memory device configured to read control data for operating conditions from a content addressed memory (CAM) block by performing a CAM read operation and to perform a data input/output operation based on the control data and a memory controller configured to store the control data of the memory device and to determine whether the memory device is to perform the CAM read operation by comparing the stored control data with the control data of the memory device when an operating mode of the memory device or the memory controller changes.Type: ApplicationFiled: July 12, 2011Publication date: March 8, 2012Inventor: Seung Han RYU
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Patent number: 8014207Abstract: A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data ‘0’ and a number of data ‘1’ in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.Type: GrantFiled: December 30, 2009Date of Patent: September 6, 2011Assignee: Hynix Semiconductor Inc.Inventors: Seung Han Ryu, Joong Seob Yang, Seung Jae Chung
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Publication number: 20100182830Abstract: A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data ‘0’ and a number of data ‘1’ in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.Type: ApplicationFiled: December 30, 2009Publication date: July 22, 2010Inventors: Seung Han RYU, Joong Seob Yang, Seung Jae Chung