Patents by Inventor Seung Han Ryu

Seung Han Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12250801
    Abstract: The present invention provides an electromagnetic wave-absorbing composite material and a manufacturing method therefor, the electromagnetic wave-absorbing composite material comprising: a polymer composite including a refractive index-adjusting material therein; and a plurality of conductive wires formed on at least one surface of the polymer composite, wherein electromagnetic waves reflected in a matching frequency (f) range derived through Mathematical Formulas 1 to 3 described in the present invention are 0.2 dB or less.
    Type: Grant
    Filed: August 2, 2022
    Date of Patent: March 11, 2025
    Assignee: KOREA INSTITUTE OF MATERIALS SCIENCE
    Inventors: Byeong Jin Park, Tae Hoon Kim, Sang Bok Lee, Byung Mun Jung, Seung Han Ryu, Yu Kyung Han, Suk Jin Kwon
  • Patent number: 12217821
    Abstract: A storage device includes a memory device including a plurality of memory dies; and a memory controller for addressing a memory die among the plurality of memory dies by using an address latch enable (ALE) signal and a command latch enable (CLE) signal, which are input during predetermined N cycles, where N is a natural number, and controlling the memory device such that the memory die performs a memory operation. The memory controller may address the memory die by addressing a channel among a plurality of channels respectively connected to a plurality of package groups by using a chip enable (CE) signal.
    Type: Grant
    Filed: June 3, 2022
    Date of Patent: February 4, 2025
    Assignee: SK hynix Inc.
    Inventors: Seung Han Ryu, In Bo Shim, Hyeong Rak Kim, Hae Seong Jeong
  • Publication number: 20240282375
    Abstract: According to the present technology, a storage device includes a nonvolatile storage area including a plurality of backup memory blocks each including a plurality of memory cells respectively connected to a plurality of word lines, and a controller configured to control the nonvolatile storage area to determine a target memory block in which data is to be stored among the plurality of backup memory blocks, determine a reference word line among the plurality of word lines coupled to the target memory block, and perform a pre-conditioning operation of programming dummy data to memory cells connected to at least one of remaining word lines except for the reference word line among the plurality of word lines coupled to the target memory block.
    Type: Application
    Filed: August 11, 2023
    Publication date: August 22, 2024
    Inventors: Seung Han RYU, Sung Geun KANG, Hyeong Rak KIM
  • Publication number: 20240196581
    Abstract: The present invention provides an electromagnetic wave-absorbing composite material and a manufacturing method therefor, the electromagnetic wave-absorbing composite material comprising: a polymer composite including a refractive index-adjusting material therein; and a plurality of conductive wires formed on at least one surface of the polymer composite, wherein electromagnetic waves reflected in a matching frequency (f) range derived through Mathematical Formulas 1 to 3 described in the present invention are 0.2 dB or less.
    Type: Application
    Filed: August 2, 2022
    Publication date: June 13, 2024
    Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
    Inventors: Byeong Jin PARK, Tae Hoon KIM, Sang Bok LEE, Byung Mun Jung, Seung Han RYU, Yu Kyung HAN, Suk Jin KWON
  • Publication number: 20230238040
    Abstract: A storage device includes a memory device including a plurality of memory dies; and a memory controller for addressing a memory die among the plurality of memory dies by using an address latch enable (ALE) signal and a command latch enable (CLE) signal, which are input during predetermined N cycles, where N is a natural number, and controlling the memory device such that the one memory die performs a memory operation. The memory controller may address the memory die by addressing a channel among a plurality of channels respectively connected to a plurality of package groups by using a chip enable (CE) signal.
    Type: Application
    Filed: June 3, 2022
    Publication date: July 27, 2023
    Inventors: Seung Han RYU, In Bo SHIM, Hyeong Rak KIM, Hae Seong JEONG
  • Publication number: 20220098463
    Abstract: A thermal dissipation composite material comprising: a matrix including a polymer material; and composite particles distributed in the matrix, wherein the composite particles include a filler, and a thermally conductive material coated on the surface of the filler by an inorganic coating layer, and wherein the plurality of thermally conductive materials coated by the inorganic coating layer are connected to each other on the surfaces of the plurality of composite particles so as to establish a heat transfer network.
    Type: Application
    Filed: December 8, 2021
    Publication date: March 31, 2022
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Yong Ho Choa, Seung Han Ryu, Min Seob Lim, Hong Baek Cho, Yo Seb Song
  • Patent number: 11217368
    Abstract: Provided are a nanostructure network and a method of fabricating the same. The nanostructure network includes nanostructures having a poly-crystalline structure formed by self-assembly of the nanostructures. The method includes preparing a nanostructure solution in which nanostructures are dispersed in a first solvent, forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent, coating a surface of a substrate with the nanostructure ink, and forming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: January 4, 2022
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Yong-Ho Choa, Young Tae Kwon, Seung Han Ryu
  • Patent number: 10782762
    Abstract: An electronic device may include a semiconductor memory device, a central processing device that controls an operation of the semiconductor memory device, and a power supply that supplies power to the semiconductor memory device and the central processing device, and the power supply may include a power controller that receives external power and generates an internal voltage and a charge voltage, an auxiliary power unit that is charged by the charge voltage in a normal mode and provides charged power when sudden power loss occurs, and a charge voltage conversion unit that supplies the auxiliary power unit with the charge voltage at a first level in the normal mode, and converts the first level of the charge voltage to a second level higher than the first level and supplies the charge voltage to the auxiliary power unit in a test mode.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: September 22, 2020
    Assignee: SK hynix Inc.
    Inventor: Seung Han Ryu
  • Publication number: 20190339761
    Abstract: An electronic device may include a semiconductor memory device, a central processing device that controls an operation of the semiconductor memory device, and a power supply that supplies power to the semiconductor memory device and the central processing device, and the power supply may include a power controller that receives external power and generates an internal voltage and a charge voltage, an auxiliary power unit that is charged by the charge voltage in a normal mode and provides charged power when sudden power loss occurs, and a charge voltage conversion unit that supplies the auxiliary power unit with the charge voltage at a first level in the normal mode, and converts the first level of the charge voltage to a second level higher than the first level and supplies the charge voltage to the auxiliary power unit in a test mode.
    Type: Application
    Filed: September 26, 2018
    Publication date: November 7, 2019
    Inventor: Seung Han RYU
  • Publication number: 20190139680
    Abstract: Provided are a nanostructure network and a method of fabricating the same. The nanostructure network includes nanostructures having a poly-crystalline structure formed by self-assembly of the nanostructures. The method includes preparing a nanostructure solution in which nanostructures are dispersed in a first solvent, forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent, coating a surface of a substrate with the nanostructure ink, and forming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate.
    Type: Application
    Filed: December 28, 2018
    Publication date: May 9, 2019
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Yong-Ho CHOA, Young Tae KWON, Seung Han RYU
  • Patent number: 10256396
    Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: April 9, 2019
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Kwan Soo Kim, Dong Joon Kim, Seung Han Ryu, Hee Baeg An, Jong Yeul Jeong, Kyung Soo Kim, Kang Sup Shin
  • Publication number: 20170110643
    Abstract: The present invention relates to a thermoelectric composite in which a thermoplastic polymer constitutes a matrix, and one or more types of electroconductive materials selected from the group consisting of chalcogen materials and chalcogenides are dispersed at grain boundaries between the thermoplastic polymer particles to form a conductive pathway, wherein an average size of the electroconductive materials is smaller than an average size of the thermoplastic polymer particles, the chalcogen materials are one or more substances selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and polonium (Po), the chalcogenides are compounds containing one or more chalcogens selected from the group consisting of S, Se, Te, and Po, and the thermoelectric composite has a thermal conductivity of 0.1 to 0.5 W/m·K. The present invention also relates to a method of preparing the thermoelectric composite.
    Type: Application
    Filed: June 4, 2015
    Publication date: April 20, 2017
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Yong Ho Choa, Seil Kim, Yo Min Choi, Seung Han Ryu
  • Publication number: 20160322561
    Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.
    Type: Application
    Filed: July 7, 2016
    Publication date: November 3, 2016
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Kwan Soo KIM, Dong Joon KIM, Seung Han RYU, Hee Baeg AN, Jong Yeul JEONG, Kyung Soo KIM, Kang Sup SHIN
  • Patent number: 9419206
    Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: August 16, 2016
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Kwan Soo Kim, Dong Joon Kim, Seung Han Ryu, Hee Baeg An, Jong Yeul Jeong, Kyung Soo Kim, Kang Sup Shin
  • Patent number: 9018028
    Abstract: A magnetic sensor and a manufacturing method thereof are provided. The magnetic sensor includes: a substrate comprising a plurality of Hall elements, a protective layer formed on the substrate, a base layer formed on the protective layer, and an integrated magnetic concentrator (IMC) formed on the base layer and comprising a surface with an elevated portion. The base layer has a larger cross-sectional area than the IMC.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: April 28, 2015
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Seung Han Ryu, Jong Yeul Jeong, Kwan Soo Kim
  • Publication number: 20140367813
    Abstract: A magnetic sensor and a manufacturing method thereof are provided. The magnetic sensor includes: a substrate comprising a plurality of Hall elements, a protective layer formed on the substrate, a base layer formed on the protective layer, and an integrated magnetic concentrator (IMC) formed on the base layer and comprising a surface with an elevated portion. The base layer has a larger cross-sectional area than the IMC.
    Type: Application
    Filed: August 9, 2013
    Publication date: December 18, 2014
    Applicant: MagnaChip Seminconductor, Ltd.
    Inventors: Seung Han RYU, Jong Yeul JEONG, Kwan Soo KIM
  • Publication number: 20140252514
    Abstract: Provided are a magnetic sensor and a method of fabricating the same. The magnetic sensor includes: hall elements disposed in a substrate, a protection layer disposed on the substrate, a seed layer disposed on the protection layer, and an integrated magnetic concentrator (IMC) formed on the seed layer, the seed layer and the IMC each having an uneven surface.
    Type: Application
    Filed: July 25, 2013
    Publication date: September 11, 2014
    Applicant: MagnaChip Semiconductor, Ltd.
    Inventors: Kwan Soo KIM, Dong Joon KIM, Seung Han RYU, Hee Baeg AN, Jong Yeul JEONG, Kyung Soo KIM, Kang Sup SHIN
  • Patent number: 8599593
    Abstract: A memory system includes a memory device configured to read control data for operating conditions from a content addressed memory (CAM) block by performing a CAM read operation and to perform a data input/output operation based on the control data and a memory controller configured to store the control data of the memory device and to determine whether the memory device is to perform the CAM read operation by comparing the stored control data with the control data of the memory device when an operating mode of the memory device or the memory controller changes.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: December 3, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventor: Seung Han Ryu
  • Publication number: 20120110401
    Abstract: A semiconductor memory apparatus includes: a first data counting unit configured to count respective programming levels of a plurality of input data and output a plurality of first data counting codes having a code value corresponding to the number of respective programming levels; a data read unit configured to sense data stored in a memory block having the plurality of input data programmed therein, based on a voltage level of a plurality of read bias signals, and output the sensed result as a plurality of output data; a second data counting unit configured to count respective programming levels of the plurality of output data and output a plurality of second data counting codes having a code value corresponding to the number of respective programming levels; a read bias control unit configured to compare the plurality of first data counting codes with the plurality of second data counting codes and output a bias control code having a code value corresponding to the comparison result; and a read bias genera
    Type: Application
    Filed: December 31, 2010
    Publication date: May 3, 2012
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Seung Han RYU, Beom Ju SHIN, Jung Woo LEE, Myeong Woon JEON
  • Publication number: 20120057389
    Abstract: A memory system includes a memory device configured to read control data for operating conditions from a content addressed memory (CAM) block by performing a CAM read operation and to perform a data input/output operation based on the control data and a memory controller configured to store the control data of the memory device and to determine whether the memory device is to perform the CAM read operation by comparing the stored control data with the control data of the memory device when an operating mode of the memory device or the memory controller changes.
    Type: Application
    Filed: July 12, 2011
    Publication date: March 8, 2012
    Inventor: Seung Han RYU