Abstract: A transistor array substrate includes a substrate, an active layer disposed on the substrate and including a channel region, a source region and a drain region, a gate insulating layer disposed on a part of the active layer, a gate electrode overlapping the channel region of the active layer and included in an electrode conductive layer which is disposed on the gate insulating layer, a source electrode included in the electrode conductive layer and in contact with a part of the source region of the active layer, and a drain electrode included in the electrode conductive layer and in contact with a part of the drain region of the active layer. The active layer includes an oxide semiconductor including crystals and is disposed as an island shape excluding a hole in a plan view.

Abstract: A display device includes a data conductive layer including a first power line, a passivation layer with a first opening exposing the first power line, a via layer with a second opening partially overlapping the first opening, a pixel electrode on the via layer, a connection electrode in the first and second openings, a pixel-defining film with an opening overlapping the second opening, a light-emitting layer on the pixel-defining film, the pixel electrode and the connection electrode, and a common electrode connected to the first power line. The data conductive layer includes a data base layer, a data main metal layer, and a data capping layer, the first power line includes a wire connection structure, in which the data main metal layer is recessed from sides of the data capping layer, and the common electrode is connected to the data main metal layer in the wire connection structure.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: The presented invention relates to a CP2c-targeting peptide-based anticancer agent. A CP2c-targeting peptide according to the presented invention binds to transcription factor CP2c to inhibit the formation of transcription factor CP2c complexes (CP2c homotetramer and CP2c/CP2b/PIAS1 heterohexamer), thereby inducing cancer cell-specific cell death. A fatty acid is bound to the peptide to ensure stability enabling long-term sustenance in vivo.

Abstract: A peptide binding to transcription factor CP2c, having an activity of preventing and treating cancer and represented by SEQ ID NO: 1: Asn-Tyr-Pro-Gln-Arg-Pro, and a pharmaceutical composition and a dietary supplement composition for preventing and treating cancer, both of which contain the same as an active ingredient are disclosed. When cancer cells are treated with the peptide and the pharmaceutical composition containing the same, the peptide can specifically bind to CP2c by passing, with very high stability, through the cell membrane and can inhibit the DNA binding ability of CP2c, thereby disturbing CP2c-mediated cancer cell-specific transcriptional activity through the inhibition of CP2c activity. Thus, the peptide and pharmaceutical composition containing the same can be effectively used for specifically treating only cancer cells and can be utilized for cancer prevention and as a dietary supplement additive therefor.

Abstract: The present invention relates to a peptide having an anticancer activity, and a pharmaceutical composition and a dietary supplement composition for preventing and treating cancer, both of which contain the same as an active ingredient and, more specifically, to a peptide binding to transcription factor CP2c, having an activity of preventing and treating cancer and represented by SEQ ID NO: 1, and a pharmaceutical composition and a dietary supplement composition for preventing and treating cancer, both of which contain the same as an active ingredient.