Abstract: The present invention relates to a downwash blocking apparatus of air mobility configured such that multi-stage guide shells configured for blocking downwash and guiding the downwash to a discharge portion of a vertiport are mounted to a rotor guide of a flying vehicle for air urban mobility to be movable upwards and downwards, whereby it is possible to prevent the downwash from affecting passengers at the time of boarding and deboarding, and therefore it is possible to solve passenger inconvenience at the time of boarding and deboarding.

Abstract: The present invention relates to a downwash blocking apparatus of air mobility configured such that multi-stage guide shells configured for blocking downwash and guiding the downwash to a discharge portion of a vertiport are mounted to a rotor guide of a flying vehicle for air urban mobility to be movable upwards and downwards, whereby it is possible to prevent the downwash from affecting passengers at the time of boarding and deboarding, and therefore it is possible to solve passenger inconvenience at the time of boarding and deboarding.

Abstract: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads.

Abstract: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(N114)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and pattered to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads.