Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: A film peeling apparatus including a peeling unit, a peeling unit position adjusted, and a clamp. The peeling unit has uneven portions at an end portion thereof. The peeling unit is configured to peel off a protection film attached on a display panel. The peeling unit position adjuster is connected to the peeling unit. The peeling unit position adjuster is configured to adjust a position of the peeling unit. The clamp is disposed separately from the peeling unit. The clamp is configured to clamp the peeling unit.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: Disclosed herein is a refrigerator in which a level difference between an inner cabinet and an outer cabinet is improved in coupling the inner cabinet with the outer cabinet by forming a corner of the inner cabinet located at a portion coupled with the outer cabinet to have a smaller radius. The refrigerator includes an inner cabinet in which a storage chamber is formed. The refrigerator also includes an outer cabinet coupled with an outside of the inner cabinet and configured to form an exterior. The refrigerator further includes an insulating material filling between the inner cabinet and the outer cabinet. The inner cabinet includes a storage portion configured to form the storage chamber. The inner cabinet also includes an edge portion configured to extend in a vertical direction toward the outside of the storage portion from a front surface edge of the storage portion and exposed to the outside.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Abstract: A method of fabricating metal wiring, including: sequentially forming first and second conductive layers on a substrate; forming a first photosensitive film pattern on the first and second conductive layers; forming first and second conductive patterns by etching parts of the first and second conductive layers by using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern positioned inside the first photosensitive film pattern by a predetermined interval by ashing the first photosensitive film pattern; etching an exposed first conductive pattern by using the second photosensitive film pattern as a mask; and removing the second photosensitive film pattern.

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract: Disclosed herein is a refrigerator in which a level difference between an inner cabinet and an outer cabinet is improved in coupling the inner cabinet with the outer cabinet by forming a corner of the inner cabinet located at a portion coupled with the outer cabinet to have a smaller radius. The refrigerator includes an inner cabinet in which a storage chamber is formed. The refrigerator also includes an outer cabinet coupled with an outside of the inner cabinet and configured to form an exterior. The refrigerator further includes an insulating material filling between the inner cabinet and the outer cabinet. The inner cabinet includes a storage portion configured to form the storage chamber. The inner cabinet also includes an edge portion configured to extend in a vertical direction toward the outside of the storage portion from a front surface edge of the storage portion and exposed to the outside.

Abstract: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Abstract: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Abstract: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.