Abstract: A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

Abstract: The present invention provides a method for manufacturing compression-molded candy comprising the steps of mixing and dissolving conventional candy mixture at a temperature of 100 to 120° C., concentrating the candy mixture to a water content of below 2.0% under the conditions of a temperature of 130 to 160° C., steam pressure of 4.0 to 9.5 kgf/cm3, and vacuum pressure of 100 to 700 mmHg, adding the conventional additives thereto, maintaining the candy mixture at a temperature of below 80° C., and molding the candy mixture by pressure packing at a pressure of 10 to 50 kgf/cm3 within 5 to 30 seconds. By lowering the ratio of water content to below 2% and pressure packing the mixture at high pressure and low temperatures, it is possible to manufacture candies of various distinct shapes stable despite changes in the outer environment.