Abstract: Disclosed is a substrate processing apparatus including: a processing container having a processing space therein; a support unit for supporting and rotating a substrate within the processing space; and a nozzle unit for supplying a treatment solution to the substrate, in which the processing container includes a plurality of cups that encloses the processing space and is provided so that openings through which the treatment solution is introduced are stacked in an up and down direction, and each of the plurality of cups includes: a sidewall; and an upper wall extending from the sidewall toward the processing space, and an inner end of an upper wall of a first cup, of which the upper wall is located at the uppermost side among the plurality of cups, protrudes further toward the processing space than an inner end of an upper wall of another cup.

Abstract: The present invention provides a refractory composition containing expandable powder that consists of an alkali metal oxide and silicon oxide and is coated onto a steel frame structure of a building or a structure requiring fire prevention or fireproofing in order to prevent the strength or resistance force of the structure from being deteriorated by high-temperature heat in case of fire. The refractory composition of the present invention specifically consists of 1 wt % to 50 wt % of expandable powder composed of silicate, 20 wt % to 80 wt % of silicate binder, 0.05 wt % to 5 wt % of stabilizer, and 0.01 wt % to 10 wt % of fiber.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.

Abstract: There is provided a chemical mechanical polishing (CMP) pad including a core of a polymer shell encapsulating a liquid organic material having one of a boiling point and a decomposition point of 130° C. or more in a polymer matrix, the CMP pad having open pores formed by the core on a polishing surface thereof, and a method of producing the CMP pad. The CMP pad having a high hardness and a high density improves polishing efficiency and flatness of a wafer and maintains a uniform size of the core, thereby producing pads having high polishing efficiency and stable polishing performance.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.