Abstract: A variable shaped beam exposure method and a pattern forming method using the same exhibit excellent linearity insofar as the variation in measured critical dimension from design critical dimension is concerned. First, the design critical dimension of one of a plurality of patterns that can be formed through the use of the variable shaped beam exposure method is determined. If the value of the critical dimension exceeds a predetermined value, the selected pattern is formed using a first exposure dose which has previously designated for this case. On the other hand, if the value of the critical dimension is less than the predetermined value, the selected pattern is formed using a second exposure dose that is equal to the first exposure dose plus a supplementary exposure dose.

Abstract: A technique of exposing a resist with electron beams having different accelerating voltages is used in a method for manufacturing a photomask. In a first exposing step, an electron beam resist on a substrate is exposed with an electron beam having an accelerating voltage low enough to keep the electron beam resist from developing. In a second exposing step, the electron beam resist is exposed with an electron beam having a higher accelerating voltage. Through the first and second exposing steps, the electron beam resist absorbs an amount of energy greater than the threshold energy, i.e., enough energy to allow the photoresist to be developed. This technique is applied to a resist coating at least one of an opaque layer and a phase shift film form on a transparent substrate. After the resist is developed, the opaque layer and/or phase shift film is etched using the patterned resist as an etching mask.

Abstract: An electron beam exposure method is disclosed. First, An exposure region is divided into a plurality of grating regions. A pattern density is obtained for one of the plurality of grating regions. A backward scattering coefficient is determined in accordance with the pattern density for the one of the plurality of grating regions. An exposure dose amount is calculated from the backward scattering coefficient. The one of the plurality of grating regions is exposed with the calculated exposure dose amount. The backward scattering coefficient is provided with a variable function proportional to the pattern density. The backward scattering coefficient &eegr; is provided with a variable value depending on the pattern density and location of the one of the plurality of grating regions.

Abstract: A technique of exposing a resist with electron beams having different accelerating voltages is used in a method for manufacturing a photomask. In a first exposing step, an electron beam resist on a substrate is exposed with an electron beam having an accelerating voltage low enough to keep the electron beam resist from developing. In a second exposing step, the electron beam resist is exposed with an electron beam having a higher accelerating voltage. Through the first and second exposing steps, the electron beam resist absorbs an amount of energy greater than the threshold energy, i.e., enough energy to allow the photoresist to be developed. This technique is applied to a resist coating at least one of an opaque layer and a phase shift film form on a transparent substrate. After the resist is developed, the opaque layer and/or phase shift film is etched using the patterned resist as an etching mask.

Abstract: A method for correcting line width variation occurring during a development process in fabricating a photomask and a recording medium in which the exposure method is recorded is provided, wherein pattern line width variation occurring in a development process with respect to a desirable pattern is estimated, and a corrective exposure is performed using a dose or bias of an electron beam corresponding to the estimated pattern line width variation. Accordingly, pattern line width variation occurring during a development process can be reduced.

Abstract: A variable shaped beam exposure method and a pattern forming method using the same exhibit excellent linearity insofar as the variation in measured critical dimension from design critical dimension is concerned. First, the design critical dimension of one of a plurality of patterns that can be formed through the use of the variable shaped beam exposure method is determined. If the value of the critical dimension exceeds a predetermined value, the selected pattern is formed using a first exposure dose which has previously designated for this case. On the other hand, if the value of the critical dimension is less than the predetermined value, the selected pattern is formed using a second exposure dose that is equal to the first exposure dose plus a supplementary exposure dose.

Abstract: A technique of exposing a resist with electron beams having different accelerating voltages is used in a method for manufacturing a photomask. In a first exposing step, an electron beam resist on a substrate is exposed with an electron beam having an accelerating voltage low enough to keep the electron beam resist from developing. In a second exposing step, the electron beam resist is exposed with an electron beam having a higher accelerating voltage. Through the first and second exposing steps, the electron beam resist absorbs an amount of energy greater than the threshold energy, i.e., enough energy to allow the photoresist to be developed. This technique is applied to a resist coating at least one of an opaque layer and a phase shift film form on a transparent substrate. After the resist is developed, the opaque layer and/or phase shift film is etched using the patterned resist as an etching mask.