Patents by Inventor Seung Huyn Yang

Seung Huyn Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor light emitting device and fabricating method thereof
    Patent number: 8044386
    Abstract: A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Seung Huyn Yang
  • Nitride semiconductor light emitting device and fabricating method thereof
    Patent number: 7728338
    Abstract: A nitride semiconductor light emitting device including: a first nitride semiconductor layer, an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.
    Type: Grant
    Filed: November 4, 2005
    Date of Patent: June 1, 2010
    Assignee: LG Innotek Co., Ltd
    Inventor: Seung Huyn Yang
  • Nitride Semiconductor Light Emitting Device and Fabricating Method Thereof
    Publication number: 20080142779
    Abstract: A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.
    Type: Application
    Filed: November 4, 2005
    Publication date: June 19, 2008
    Inventor: Seung Huyn Yang