Patents by Inventor Seung-Hwan Cho

Seung-Hwan Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8367444
    Abstract: A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: February 5, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Min Kim, Bo-Sung Kim, Seon-Pil Jang, Seung-Hwan Cho, Kang-Moon Jo
  • Patent number: 8304280
    Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.
    Type: Grant
    Filed: August 16, 2010
    Date of Patent: November 6, 2012
    Assignee: Samsung Display Co., Ltd.
    Inventors: Keun-Kyu Song, Tae-Young Choi, Tae-Hyung Hwang, Seung-Hwan Cho
  • Publication number: 20120258699
    Abstract: A method for operating a portable terminal so as to reduce power consumption during the support of a communication service and a portable terminal supporting the same is provided. The method includes activating a Radio Frequency (RF) communication unit, downloading a part of data of predetermined contents through the RF communication unit, buffering the downloaded part of the data in a buffer so as to output the buffered downloaded part of the data, and executing an idle time for terminating or reducing a power supply of the RF communication unit when the downloading of the part of the data of the predetermined contents is completed.
    Type: Application
    Filed: April 4, 2012
    Publication date: October 11, 2012
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Gil Yoon KIM, Heung Ki LEE, Tae Hyung KIM, Hyun Mun KIM, Ji Wan SONG, Yang Soo LEE, Seung Hwan CHO
  • Patent number: 8278648
    Abstract: An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: October 2, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae Young Choi, Bo Sung Kim, Keun Kyu Song, Seung Hwan Cho
  • Patent number: 8252625
    Abstract: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: August 28, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung Hwan Cho, Keun Kyu Song, Min Ho Yoon
  • Patent number: 8252626
    Abstract: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: August 28, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hwan Cho, Bo-Sung Kim, Keun-Kyu Song, Tae-Young Choi, Min-Ho Yoon, Jung-Hun Noh
  • Patent number: 8241934
    Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: August 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Hun Noh, Myung-Hwan Kim, Seung-Hwan Cho
  • Patent number: 8243888
    Abstract: A method and apparatus for managing call details using speech recognition are provided. To manage call details, incoming and outgoing voice signals during a call are converted into their written equivalent by speech recognition technology. The details of the call, including the conversation, are stored in text form so that a user can search for them when needed. Accordingly, the user can easily retrieve what was spoken during calls and systematically manage desired information by searching or sorting the call details.
    Type: Grant
    Filed: October 19, 2005
    Date of Patent: August 14, 2012
    Assignee: Samsung Electronics Co., Ltd
    Inventor: Seung-Hwan Cho
  • Patent number: 8222070
    Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.
    Type: Grant
    Filed: August 16, 2010
    Date of Patent: July 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Keun-Kyu Song, Tae-Young Choi, Tae-Hyung Hwang, Seung-Hwan Cho
  • Patent number: 8211757
    Abstract: An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: July 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung Hwan Cho, Bo Sung Kim, Keun Kyu Song
  • Publication number: 20120142126
    Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.
    Type: Application
    Filed: February 15, 2012
    Publication date: June 7, 2012
    Inventors: Jung-Hun Noh, Myung-Hwan Kim, Seung-Hwan Cho
  • Publication number: 20120077495
    Abstract: A method and a portable device for supporting an adaptive data communication control are provided. The device includes a memory unit, a control unit, and a radio frequency unit. The memory unit stores a table that contains data communication setting information corresponding to each service operator network. The control unit performs a Public Land Mobile Network (PLMN) selection after entering into a service area of specific service operator network, and receives Mobile Country Code/Mobile Network Code (MCC/MNC) information from the specific service operator network while the PLMN selection is being performed. The control unit extracts the data communication setting information corresponding to the MCC/MNC information from the table, and establishes a data communication connection with the specific service operator network according to the extracted data communication setting information.
    Type: Application
    Filed: September 28, 2011
    Publication date: March 29, 2012
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Jin Yup KIM, Ki Soo CHO, Seung Hwan CHO
  • Patent number: 8138503
    Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.
    Type: Grant
    Filed: October 7, 2009
    Date of Patent: March 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Hun Noh, Myung-Hwan Kim, Seung-Hwan Cho
  • Patent number: 8045105
    Abstract: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hwan Cho, Bo-Sung Kim, Jung-Han Shin, Ju-Han Bae
  • Publication number: 20110254011
    Abstract: A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.
    Type: Application
    Filed: October 12, 2010
    Publication date: October 20, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Min KIM, Bo-Sung KIM, Seon-Pil JANG, Seung-Hwan CHO, Kang-Moon JO
  • Publication number: 20110233536
    Abstract: A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.
    Type: Application
    Filed: July 20, 2010
    Publication date: September 29, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Min KIM, Yeon-Taek JEONG, Seon-Pil JANG, Seung-Hwan CHO, Bo-Sung KIM, Tae-Young CHOI
  • Patent number: 7994494
    Abstract: An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: August 9, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-Sung Kim, Mun-Pyo Hong, Yong-Uk Lee, Joon-Hak Oh, Keun-Kyu Song, Seung-Hwan Cho
  • Patent number: 7984013
    Abstract: Disclosed is a method and apparatus for learning behavior in a software robot.
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: July 19, 2011
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Kang-Hee Lee, Kwang-Choon Kim, Ye-Hoon Kim, Jong-Hwan Kim, Se-Hyoung Cho, Seung-Hwan Cho
  • Patent number: 7977144
    Abstract: A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.
    Type: Grant
    Filed: May 3, 2010
    Date of Patent: July 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hwan Cho, Bo-Sung Kim, Keun-Kyu Song, Tae-Young Choi, Jung-Hun Noh
  • Publication number: 20110140094
    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed.
    Type: Application
    Filed: June 24, 2010
    Publication date: June 16, 2011
    Inventors: Tae-Young Choi, Hi-Kuk Lee, Bo-Sung Kim, Young-Min Kim, Seung-Hwan Cho, Young-Soo Yoon, Yeon-Taek Jeong, Seon-Pil Jang