Abstract: Proposed is a biosensor including a first specimen inlet configured to provide a space through which a specimen flows inside, an electrode element configured to measure an electromechanical signal of the flowing-in specimen, a chamber configured to provide a space in which an electrochemical reaction of the flowing-in specimen occurs, and a first specimen outlet configured to provide a space through which the flowing-in specimen flows outside, in which a moisture absorber is disposed in the chamber.

Abstract: The present disclosure relates to an electrochemical sensor including: a substrate: a plurality of working electrodes formed on the substrate; and a single reference electrode formed on the substrate, wherein a separation distance between the single reference electrode and the plurality of working electrodes formed around the reference electrode satisfies Equation 1 below, and a method for manufacturing the same.

Abstract: In etching a metal line formed as a dual layer of aluminum alloy and molybdenum, the metal line consisting of the dual layer of aluminum alloy and molybdenum is etched through one-time wet etching by applying the etchant including HNO3, HClO4, a Ferric compound (Fe3+), and a Flouro compound (F?), the process can be reduced and a metal line having a good profile can be formed.

Abstract: An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Abstract: An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Abstract: In etching a metal line formed as a dual layer of aluminum alloy and molybdenum, the metal line consisting of the dual layer of aluminum alloy and molybdenum is etched through one-time wet etching by applying the etchant including HNO3, HClO4, a Ferric compound (Fe3+), and a Flouro compound (F?), the process can be reduced and a metal line having a good profile can be formed.