Abstract: A display device includes: a first pixel including a first organic light emitting diode; an initialization voltage generator for generating a first initialization voltage to be supplied to an anode of the first organic light emitting diode; and a timing controller including a first lookup table in which a plurality of first initialization voltage values corresponding to a plurality of maximum luminances are recorded, the timing controller being configured to determine a value of the first initialization voltage, based on reception information on a target maximum luminance and the first lookup table.

Abstract: The present invention relates to a method for preparing a sulfide-based solid electrolyte, a sulfide-based solid electrolyte prepared by the method, and an all-solid-state lithium secondary battery including the sulfide-based solid electrolyte. The method of the present invention includes a) mixing Li2S with P2S5 to prepare a mixed powder, b) placing the mixed powder, an ether, and stirring balls in a container, sealing the container, followed by stirring to prepare a suspension, and c) stirring the suspension under high-temperature and high-pressure conditions to prepare sulfide-based solid particles.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: An RF switch device and a method of manufacturing the same are disclosed. More particularly, an RF switch device in a stacked configuration and a method of manufacturing the same seeking to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.