Abstract: Example embodiments include a battery insulation sheet having a structure in which a first substrate, an aerogel layer, and a second substrate are laminated, wherein opposite surfaces of the aerogel layer is in contact with the first substrate or the second substrate adjacent thereto. Example embodiments also include a method of manufacturing a battery insulation sheet, and a battery module including the battery insulation sheet.

Abstract: A communication apparatus for a vehicle according to an embodiment and a control method therefor are disclosed. The communication apparatus for a vehicle comprises: an antenna unit including a first antenna and a plurality of second antennas; a first switch for switching a first path to the first antenna and a second path to each of the plurality of second antennas; a second switch for switching a second path to any one of the plurality of second antennas; a length adjustment unit that is connected to the second path to the one second antenna connected to the second switch and adjusts the resonance length of the connected second antenna; and a communication control unit that generates a switching signal for connection to any one of the plurality of second antennas according to the state of the first antenna.

Abstract: An aerogel composition for battery insulation sheets includes a reinforcement material including two or more fibrous supports, an aerogel, a functional material including a binder, a dispersant, or a combination thereof, and a solvent, wherein the two or more fibrous supports have different aspect ratios (AR) as represented by Formula 1: AR=L/D,??Formula 1 where in Formula 1, L indicates an average length of a fibrous support of the two or more fibrous supports and D indicates an average diameter of the two or more fibrous supports.

Abstract: Examples of the disclosure include a battery module including a plurality of cells, an insulation sheet between the plurality of cells, the insulation sheet having an upper surface and a lower surface disposed so as to face cells adjacent thereto, respectively, and a refractory layer formed on at least one side surface part of a border side surface between the upper surface and the lower surface of the insulation sheet, wherein the refractory layer includes an inorganic binder. Examples of the disclosure also include a method of manufacturing the battery module, and a battery pack including the battery module.

Abstract: Example embodiments include an aerogel composition for battery insulation sheets, the aerogel composition including a reinforcement material including a first fibrous support and a second fibrous support, an aerogel, a functional material including a binder, a dispersant, or a combination thereof, and a solvent, wherein the first fibrous support and the second fibrous support have different ingredients. Example embodiments also include a method of manufacturing the aerogel composition, a battery insulation sheet formed using the aerogel composition, and a method of manufacturing the battery insulation sheet.

Abstract: The present disclosure relates to a method for manufacturing core-shell particles using carbon monoxide, and more particularly, to a method for manufacturing core-shell particles, the method of which a simple and fast one-pot reaction enables particle manufacturing to reduce process costs, facilitate scale-up, change various types of core and shell metals, and form a multi-layered shell by including the steps of adsorbing carbon monoxide on a transition metal for a core, and reacting carbon monoxide adsorbed on the surface of the transition metal for the core, a metal precursor for a shell, and a solvent to form particles with a core-shell structure having a reduced metal shell layer formed on a transition metal core.

Abstract: A display device including: scan lines including first and second scan lines; pixels connected to the scan lines; photo sensors connected to some of the scan lines, the photo sensors including a first photo sensor connected to the first scan line and a readout line, and a second photo sensor connected to the second scan line and the readout line; a scan driver to provide scan signals to the scan lines; and a readout circuit to receive, through the readout line, detection signals which are outputted from the photo sensors in response to the scan signals, wherein, while the scan signals are provided to the first and second scan lines, the readout circuit samples a detection signal of one of the first photo sensor and the second photo sensor without sampling a detection signal of the other one of the first photo sensor and the second photo sensor.

Abstract: A communication apparatus for a vehicle according to an embodiment and a control method therefor are disclosed. The communication apparatus for a vehicle comprises: an antenna unit including a first antenna and a plurality of second antennas; a first switch for switching a first path to the first antenna and a second path to each of the plurality of second antennas; a second switch for switching a second path to any one of the plurality of second antennas; a length adjustment unit that is connected to the second path to the one second antenna connected to the second switch and adjusts the resonance length of the connected second antenna; and a communication control unit that generates a switching signal for connection to any one of the plurality of second antennas according to the state of the first antenna.

Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: The present invention relates to a quantum dot light emitting device, a light emitting device package, and a backlight unit including a quantum dot nanostructure composed of I-VII compounds. The quantum dot light emitting device included first and second electrodes, a light emitting layer including the quantum dot nanostructure, a hole injection layer, a hole transport layer, an electron injection layer and an electron transport layer. The light emitting device package includes a housing, a light emitting device and a light converter, and the light emitting device is disposed in the housing. The light converter is disposed on the light emitting device, and the quantum dot nanostructure may be dispersed therein. The backlight unit includes a light source having the quantum dot light emitting device or the light emitting device package, and a light guide plate uniformly dispersing the direction of light emitted from the light source.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).