Abstract: A venturi flowmeter includes a ring of which the inside is hollow and which prevents inner wall abrasion or fatigue load accumulation at a main orifice and thus can reduce maintenance costs. The venturi flowmeter includes a main orifice of which the inside is hollow and an element of which one side has a hollow inside having the same diameter as that of a through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A diffuser has one side having a hollow inside of the same diameter as that of the through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A ring is connected between the main orifice and one side of the element. The ring includes a stopper formed along an inner wall and having a hollow central portion.

Abstract: Disclosed is a method of manufacturing a composite anode material for a lithium secondary battery containing nano-sized silicon and a carbonaceous material through a single process, the method including mixing a carbonaceous material and solid silicon and performing carbothermal shock for rapidly heating the carbonaceous material so that the solid silicon is melted using the heated carbonaceous material and is dispersed and attached in the form of particles to the surface of the carbonaceous material, the size of the silicon particles, which grow on the surface of the carbonaceous material, being adjusted during the carbothermal shock. Accordingly, processing costs can be lower than conventional methods of manufacturing silicon nanoparticles, and manufacturing costs can be further reduced by simultaneously performing formation of the silicon nanoparticles and compounding with the carbonaceous material.

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: A semiconductor device includes an active pattern which includes a lower pattern, and a sheet pattern that is spaced apart from the lower pattern in a first direction, a gate structure on the lower pattern that includes a gate electrode that surrounds the sheet pattern, the gate electrode extending in a second direction that is perpendicular to the first direction, and a source/drain pattern on the lower pattern and in contact with the sheet pattern. A contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction, and the sheet pattern has a second width in the second direction that is greater than the first width.

Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.

Abstract: The present invention relates to a method for preparing a flame retardant aid, and a flame retardant resin composition including a flame retardant aid prepared by the same, wherein the method includes preparing a metal precursor solution by adding a zinc precursor and a precursor containing an M1 metal, and preparing a multi-component metal hydroxide by adding an acid or a base to the metal precursor solution to proceed with a sol-gel reaction.

Abstract: A semiconductor device including an insulating layer on a substrate; channel semiconductor patterns stacked on the insulating layer and vertically spaced apart from each other; a gate electrode crossing the channel semiconductor patterns; source/drain regions respectively at both sides of the gate electrode and connected to each other through the channel semiconductor patterns, the source/drain regions having concave bottom surfaces; and air gaps between the insulating layer and the bottom surfaces of the source/drain regions.

Abstract: A venturi flowmeter includes a ring of which the inside is hollow and which prevents inner wall abrasion or fatigue load accumulation at a main orifice and thus can reduce maintenance costs. The venturi flowmeter includes a main orifice of which the inside is hollow and an element of which one side has a hollow inside having the same diameter as that of a through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A diffuser has one side having a hollow inside of the same diameter as that of the through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A ring is connected between the main orifice and one side of the element. The ring includes a stopper formed along an inner wall and having a hollow central portion.

Abstract: Provided is a method of producing a carbon fiber, the method including: a) adding an acrylonitrile-based polymer solution to a solution containing a glycol-based compound having a boiling point of 180 to 210° C. to precipitate an acrylonitrile-based polymer; b) melt spinning the acrylonitrile-based polymer to obtain a spun fiber; and c) performing stabilization and carbonization on the spun fiber to obtain a carbon fiber.

Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.

Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

Abstract: A semiconductor device including an insulating layer on a substrate; channel semiconductor patterns stacked on the insulating layer and vertically spaced apart from each other; a gate electrode crossing the channel semiconductor patterns; source/drain regions respectively at both sides of the gate electrode and connected to each other through the channel semiconductor patterns, the source/drain regions having concave bottom surfaces; and air gaps between the insulating layer and the bottom surfaces of the source/drain regions.

Abstract: Techniques involving selective modification of keyboard presentation and functionality. A commanding mode is selectively activated on a virtual keyboard. Activating the commanding mode attributes commands to respective individual keys of the virtual keyboard. Also in response to the commanding mode, indicia suggestive of the command is presented on those individual keys to which the commands were attributed. The commands can be executed in an application in response to selection of the respective individual keys when in commanding mode.

Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

Abstract: Techniques involving selective modification of keyboard presentation and functionality. A commanding mode is selectively activated on a virtual keyboard. Activating the commanding mode attributes commands to respective individual keys of the virtual keyboard. Also in response to the commanding mode, indicia suggestive of the command is presented on those individual keys to which the commands were attributed. The commands can be executed in an application in response to selection of the respective individual keys when in commanding mode.

Abstract: A carbon composite composition and a carbon heater are provided. The carbon composite composition may include a phenolic resin as a binder, a lubricant, and a base material that determines a specific resistance of a resistance heating element at a high temperature. The carbon composite composition may prevent a dielectric breakdown, a spark and plasma from occurring in a carbon heater, and may improve radiation efficiency of the carbon heater.

Abstract: A carbon heating element and a method for manufacturing a carbon heating element are provided. The carbon heating element may efficiently dissipate heat and prevent disconnection or destruction of a heating element to prolong a lifespan thereof without generating a spark and plasma under a high voltage. The carbon heating element may include carbon (C) and silicon carbide (SiC), and the carbon heating element may have a thermal conductivity of 1.6 W/m·K or more.

Abstract: A user terminal device is disclosed. The user terminal device comprises: a communication unit for implementing communication between at least one other user terminal device and a terminal for payment; a display unit for displaying a UI screen for a payment; a user input unit for inputting information on payment means and a payment amount on the UI screen; and a processor for controlling a communication unit for receiving, from at least one other user terminal device, information on payment means and a payment amount input in the at least one other user terminal device and, on the basis of information input through the user input unit and received information, transmitting payment requests respectively corresponding to the user terminal device and the at least one other user terminal device to the terminal for payment.

Abstract: The present invention provides a water-soluble fluorescent compound of resveratrone 6-O-?-glucoside [(E)-4-(8-hydroxy-6-(((2S,3R,4S,5S,6R)-3,4,5-trihydroxy-6-(hydroxymethyl)tetrahydro-2H-pyran-2-yl)oxy)naphthalen-2-yl)but-3-en-2-one] and its derivatives of Formula I which have at least one water-soluble substituent, and a method for preparing the same by a photochemical reaction of resveratrol 3-O-?-glucoside and its derivatives of having Formula 3 which are not fluorescent. Said new water-soluble fluorescent compounds has single-photon absorptive characteristics and/or two-photon absorptive characteristics as well as no or little toxicity, and can be usefully utilized in fields that requires water-soluble fluorescent characteristics (diagnosis, fluorescent probe, in vivo imaging, display, etc.).