Abstract: An inductively coupled plasma type ion implanter may include a reaction tube, an induction coil surrounding the reaction tube, an aperture structure arranged over the reaction tube, a showerhead arranged on a lower surface of the reaction tube, a flange arranged under the showerhead, first and second aperture adaptors connected between the flange and the aperture structure, a gas line receiving the reaction gas from the flange and transferring the reaction gas to the showerhead and a cooling line receiving a cooling fluid from the flange. A circulation length of the cooling line around the flange is longer than a circulation length of the gas line around the flange.

Abstract: A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.

Abstract: A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.

Abstract: Disclosed is a method of preparing a catalyst for polymerization of aliphatic polycarbonates and a method of polymerizing an aliphatic polycarbonate. This method includes reacting a zinc precursor and organic dicarboxylic acid in a non-ionic surfactant-included solution.

Abstract: Disclosed is a method of preparing a catalyst for polymerization of an aliphatic polycarbonate including oxidizing a dicarboxylic acid precursor and a zinc precursor under a pressurized condition, and a method for polymerizing the aliphatic polycarbonate.

Abstract: Disclosed is a method of preparing a catalyst for polymerization of aliphatic polycarbonates and a method of polymerizing an aliphatic polycarbonate. This method includes reacting a zinc precursor and organic dicarboxylic acid in a non-ionic surfactant-included solution.

Abstract: Disclosed is a method of preparing a catalyst for polymerization of an aliphatic polycarbonate including oxidizing a dicarboxylic acid precursor and a zinc precursor under a pressurized condition, and a method for polymerizing the aliphatic polycarbonate.

Abstract: Disclosed are copolymers including an alkylene carbonate, and a method of preparing the same. The copolymers are represented by Formulas 1 and 2, and they are prepared with terpolymerized lactide or delta-valerolactone, carbon dioxide, and alkylene oxide, in the presence of a catalyst. (wherein, —O—A— is an opened alkylene oxide structure, the alkylene oxide being selected from the group consisting of ethylene oxide, propylene oxide, 1-butene oxide, 1,1-dimethylethylene oxide, cyclopentene oxide, cyclohexene oxide, 1-phenylethylene oxide, 1-vinylethylene oxide, and 1-trifluoromethylethylene oxide; and x and y are independently an integer being equal to or less than 2,000, n is an integer, and n=(z-x-y), wherein z is an integer being equal to or less than 20,000.).

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: Disclosed are copolymers including an alkylene carbonate, and a method of preparing the same. The copolymers are represented by Formulas 1 and 2, and they are prepared with terpolymerized lactide or delta-valerolactone, carbon dioxide, and alkylene oxide, in the presence of a catalyst.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.