Abstract: An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern.

Abstract: A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.

Abstract: A method for fabricating a semiconductor device includes forming a structure having first surfaces at a height above a second surface, which is provided between the first surfaces, forming a first silicon layer on the structure, performing a tilt ion implantation process on the first silicon layer to form a crystalline region and an amorphous region, forming a second silicon layer on the amorphous region, removing the second silicon layer and the first silicon layer until a part of the second surface is exposed, thereby forming an etch barrier, and etching using the etch barrier to form an open part that exposes a part of a sidewall of the structure.

Abstract: A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.

Abstract: A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.

Abstract: A method for forming a high quality insulation layer on a semiconductor device is presented. The method includes a first step of supplying any one of a silicon source gas and an oxygen source gas into a process chamber in which a semiconductor substrate is placed; a second step of simultaneously supplying the silicon source gas and the oxygen source gas into the process chamber having undergone the first step and depositing a silicon oxide layer on the semiconductor substrate; and a third step of supplying any one of the silicon source gas and the oxygen source gas into the process chamber having undergone the second step.

Abstract: A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.

Abstract: The present invention relates to 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives and method for preparing the same. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives can be prepared by refluxing 1,3,5-tricyanomesitylene with N-formylamine dimethylacetal or substituted benzaldehyde, or by the Wittig reaction of 1,3,5-tricyano-2,4,6-tris[(diethoxyphosphoryl)methyl]benzene with substituted benzaldehyde. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives exhibit large first hyperpolarizability in solution and significant second harmonic generation (SHG) in the powder state, and are useful as optical devices such as electro-optic modulators, optical switch, or the like for treating optical signal in optical communication industry.

Abstract: The present invention relates to 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives and method for preparing the same. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives can be prepared by refluxing 1,3,5-tricyanomesitylene with N-formylamine dimethylacetal or substituted benzaldehyde, or by the Wittig reaction of 1,3,5-tricyano-2,4,6-tris[(diethoxyphosphoryl)methyl]benzene with substituted benzaldehyde. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives exhibit large first hyperpolarizability in solution and significant second harmonic generation (SHG) in the powder state, and are useful as optical devices such as electro-optic modulators, optical switch, or the like for treating optical signal in optical communication industry.

Abstract: A method for forming a capacitor for a semiconductor device is provided. In the method, a storage electrode is formed of a polysilicon layer, and a hemispherical silicate glass (HSG) layer is optionally formed on the surface of the storage electrode to increase the surface area of the storage electrode. Next, a TaSiN layer as a diffusion barrier is formed, a TaON layer as a dielectric layer is formed, and then a TaSiN layer is formed on the TaON layer. Next, a plate electrode is formed on the TaSiN layer, thereby completing a capacitor. Diffusion of oxygen between the electrodes and the dielectric layer is effectively blocked, so that reduction of capacitance and occurrence of leakage current are prevented. Due to improved dielectric characteristics of the TaON layer, increasing the surface area of the dielectric layer—for example, by forming a HSG layer—may not be required, thereby increasing a processing margin between adjacent capacitors.

Abstract: A method for forming a capacitor for a semiconductor device is provided. In the method, a storage electrode is formed of a polysilicon layer, and a hemispherical silicate glass (HSG) layer is optionally formed on the surface of the storage electrode to increase the surface area of the storage electrode. Next, a TaSiN layer as a diffusion barrier is formed, a TaON layer as a dielectric layer is formed, and then a TaSiN layer is formed on the TaON layer. Next, a plate electrode is formed on the TaSiN layer, thereby completing a capacitor. Diffusion of oxygen between the electrodes and the dielectric layer is effectively blocked, so that reduction of capacitance and occurrence of leakage current are prevented. Due to improved dielectric characteristics of the TaON layer, increasing the surface area of the dielectric layer-for example, by forming a HSG layer-may not be required, thereby increasing a processing margin between adjacent capacitors.