Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: A cell assembly according to the present disclosure includes a cell stack including one pouch-type battery cell or two or more pouch-type battery cells stacked; and a cell cover covering two side portions of the cell stack along a widthwise direction of the cell stack and a top portion of the cell stack, wherein the cell cover is configured to adjust a width of the cell cover according to a width of the cell stack.

Abstract: Provided are a separator and an electrochemical device using the same, in particular, a separator having significantly low heat shrinkage even at a high temperature and also significantly improved adhesive strength by including inorganic particles having specific fluorescence properties in the separator, and an electrochemical device using the same.

Abstract: A power semiconductor is disclosed and for high-voltage and high-power operation. An example power semiconductor comprises: a substrate; a drift layer formed in the substrate including an active area having doped regions and a termination area configured to surround the active area; and a junction termination extension (JTE) in the termination area.

Abstract: The present invention relates to a nanoparticle composition for pulmonary drug delivery and, more specifically, to a drug delivery composition useful for specifically delivering a drug into the lungs, wherein the drug delivery composition comprises drug-bearing nanoparticles in which a complex of an anionic drug and a specific lipid is encapsulated inside nanoparticles formed by an amphiphilic block copolymer.

Abstract: An off-road travel assistive device includes a receiver configured to receive travel data of a vehicle, and an estimator. The estimator includes a road surface severity estimator configured to estimate road surface severity data based on the travel data of the vehicle. The device also includes a stuck probability determiner configured to determine probability of a stuck state of the vehicle occurring using the travel data and the road surface severity data. The stuck probability determiner determines stuck probability using a meta-model.

Abstract: A battery pack according to an embodiment of the present invention includes a plurality of battery cells in which battery cells each including a sealing portion are stacked in one direction, a cell cover that covers at least a part of the plurality of battery cells, a venting passage formed between the sealing portion of the plurality of battery cells and the cell cover, and an adhesive layer disposed in an inner surface of the venting passage.

Abstract: The present invention relates to a discharge method of a battery, comprising: a first discharging step of discharging a battery by connecting the battery and a power converter and applying voltage thereto; and a second discharging step of discharging the battery by applying a reverse voltage of the voltage of the first discharging step, after the first discharging step. According to the present invention, electrical energy of a battery can be recovered and recycled, and an electrically safe state can be secured in a subsequent disassembly process by putting the battery in a completely discharged state in which normal operation is impossible.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: The motor for a washing machine according to the present invention comprises a motor housing 11 comprising a stator 12; a pair of first supports 16 formed integrally with the motor housing 11 in the front of the motor housing 11; a connection cylindrical member 11B cylindrically extending backwardly from a middle part of the motor housing 11 to be formed integrally with the motor housing 11; and a pair of second supports 21 integrally formed at right and left ends of the connection cylindrical member 11B.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating cancer, containing a mTOR-signaling inhibitor as an active ingredient. The composition of the present invention exhibits the efficacy of inhibiting the growth of cancer cells and killing cancer cells, and thus can be used as an anticancer agent.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: Semiconductor devices as described herein may include a fin-shaped pattern extending in a first direction, first and second side walls facing each other, first and second gate electrodes extending in a second direction and spaced apart from each other, a first gate spacer that is on a side wall of the first gate electrode, a second gate spacer that is on a side wall of the second gate electrode, a first trench in the fin-shaped pattern that is between the first and second gate electrodes and having a first width, and a second trench in the fin-shaped pattern that is below the first trench and has a second width smaller than the first width. The fin-shaped pattern may include first and second inflection points on the side walls of the fin-shaped pattern, and a bottom surface of the second trench may be lower than the inflection points.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: Semiconductor devices as described herein may include a fin-shaped pattern extending in a first direction, first and second side walls facing each other, first and second gate electrodes extending in a second direction and spaced apart from each other, a first gate spacer that is on a side wall of the first gate electrode, a second gate spacer that is on a side wall of the second gate electrode, a first trench in the fin-shaped pattern that is between the first and second gate electrodes and having a first width, and a second trench in the fin-shaped pattern that is below the first trench and has a second width smaller than the first width. The fin-shaped pattern may include first and second inflection points on the side walls of the fin-shaped pattern, and a bottom surface of the second trench may be lower than the inflection points.