Abstract: A wireless communication device having a stable capacity of an antenna even if a terminal is bent or folded is disclosed. The wireless communication device includes an antenna, a first ground portion to which the antenna is grounded, and a second ground portion that is electrically separated from the first ground portion, and the wireless communication device is bent around a boundary between the first ground portion and the second ground portion.

Abstract: A wireless communication device having a stable capacity of an antenna even if a terminal is bent or folded is disclosed. The wireless communication device includes an antenna, a first ground portion to which the antenna is grounded, and a second ground portion that is electrically separated from the first ground portion, and the wireless communication device is bent around a boundary between the first ground portion and the second ground portion.

Abstract: A new magnetic substance having a high magnetic permeability and a low magnetic permeability loss over a wide frequency bandwidth, a composite material for antennas using the new magnetic substance and a polymer, and an antenna using the composite material for antennas.

Abstract: A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.

Abstract: Disclosed is a wireless communication system using visible light and, more particularly, a short-range wireless communication system using a camera sensor module and a flash module mounted on a wireless terminal. The wireless terminal utilizes an LED and a camera sensor selectively for performing camera functions in a wireless terminal and as interface modules for visible light short-range communication.

Abstract: An optical apparatus having a vertical light receiving element is disclosed. The optical apparatus is configured to couple light generated from a light source using the vertical light receiving element, then transforms the received light signals into an electric signal. The optical apparatus includes: a vertical photo detector having a photo-absorption layer; and an optical bench on which the photo detector is disposed. The optical bench having a first groove and a second groove formed adjacent to each other, the first groove having a predetermined inclination and being formed at an edge of a first surface of the optical bench, and the first surface being opposite to a second surface of the optical bench, on which the photo detector is disposed, such that a light signal incident to the first groove is refracted at a predetermined angle by the first groove; and the light signal, which has been refracted by the first groove, is totally reflected by the second groove.

Abstract: A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.

Abstract: Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

Abstract: Disclosed are an edge-illuminated refracting-facet type light receiving device and a fabricating method thereof. The edge-illuminated refracting-facet type light receiving device has a semiconductor substrate, a photo-absorption layer formed on the semiconductor substrate, a first window layer entirely formed on an upper surface of the photo-absorption layer, a second window layer formed on an upper surface of the first window layer and having a light incident plane, which is inclined at a predetermined angle with respect to the photo-absorption layer in such a manner that light refracted at the light incident plane is incident into the photo-absorption layer, a first conductive metal layer in contact with the second window layer, and a second conductive metal layer, which is different from the first conductive metal layer, formed at a bottom surface of the semiconductor substrate.

Abstract: A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.

Abstract: An optical apparatus having a vertical light receiving element is disclosed. The optical apparatus is configured to couple light generated from a light source using the vertical light receiving element, then transforms the received light signals into an electric signal. The optical apparatus includes: a vertical photo detector having a photo-absorption layer; and an optical bench on which the photo detector is disposed. The optical bench having a first groove and a second groove formed adjacent to each other, the first groove having a predetermined inclination and being formed at an edge of a first surface of the optical bench, and the first surface being opposite to a second surface of the optical bench, on which the photo detector is disposed, such that a light signal incident to the first groove is refracted at a predetermined angle by the first groove; and the light signal, which has been refracted by the first groove, is totally reflected by the second groove.

Abstract: Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.

Abstract: Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

Abstract: Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

Abstract: Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

Abstract: Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.

Abstract: An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed.

Abstract: An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed.

Abstract: A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.

Abstract: A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.