Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.

Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.