Abstract: A display device includes: a base layer including a display area including an emission area and a non-emission area adjacent to the emission area, and a non-display area around the display area; a light emitting element in the emission area on the base layer; a color filter layer located above the light emitting element; and a light blocking pattern on the light emitting element and including a first light blocking pattern in the non-emission area and a second light blocking pattern in the non-display area. The first light blocking pattern and the second light blocking pattern are different in thickness from each other.

Abstract: Disclosed is an automatic bonding system for an LCD device. The automatic bonding system includes a bonding unit configured to perform a process of bonding a first substrate to a second substrate, a first substrate supply unit configured to include an inverting arm and supply the first substrate to the bonding unit, a second substrate supply unit configured to include an adhesive resin coating unit and supply the second substrate to the bonding unit, a pre-hardening unit configured to perform a process of pre-hardening an adhesive resin that adheres the first and second substrates, and a hardening unit configured to perform a process of hardening the adhesive resin that adheres the first and second substrates. A gap between the first and second substrates bonded to each other by the bonding unit is a bonding gap controlled by a gap variable control stage.

Abstract: Disclosed is an automatic bonding system for an LCD device. The automatic bonding system includes a bonding unit configured to perform a process of bonding a first substrate to a second substrate, a first substrate supply unit configured to include an inverting arm and supply the first substrate to the bonding unit, a second substrate supply unit configured to include an adhesive resin coating unit and supply the second substrate to the bonding unit, a pre-hardening unit configured to perform a process of pre-hardening an adhesive resin that adheres the first and second substrates, and a hardening unit configured to perform a process of hardening the adhesive resin that adheres the first and second substrates. A gap between the first and second substrates bonded to each other by the bonding unit is a bonding gap controlled by a gap variable control stage.

Abstract: Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 ?m on the sapphire substrate by reacting HCl and NH3 as a Group III/V mix gas. The nanoporous buffer layer interposed on the interface between the sapphire substrate and gallium nitride reduces tensile stress generated by the difference in thermal expansion coefficient between gallium nitride and the sapphire substrate, enables growth of the gallium nitride layer to a thickness of 1 micrometer (?m) to several millimeters (mm) without causing cracks, and reduces the lattice constant difference to improve crystallinity.

Abstract: Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 ?m on the sapphire substrate by reacting HCl and NH3 as a Group III/V mix gas. The nanoporous buffer layer interposed on the interface between the sapphire substrate and galluim nitride reduces tensile stress generated by the difference in thermal expansion coefficient between gallium nitride and the sapphire substrate, enables growth of the gallium nitride layer to a thickness of 1 micrometer (m) to several millimeters (nm) without causing cracks, and reduces the lattice constant difference to improve crystallinity.