Abstract: A semiconductor device may include a substrate including a chip region and an edge region enclosing the chip region, and at least one coarse key pattern divided into fine key patterns on the edge region, extend in a first direction and are spaced apart from each other in a second direction crossing the first direction. Each of the fine key patterns may include a first key pattern, extending in the first direction, and a second key pattern including a first portion extending along a side surface of the first key pattern, and a second portion extending along an opposite side surface of the first key pattern. A width of each of the first and second portions may be smaller than a width of the first key pattern, when measured in the second direction.

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer, a first separation layer, a first mandrel layer, a second separation layer and a second mandrel layer on a substrate; patterning the second mandrel layer to form second mandrel patterns; forming first spacers on the second mandrel patterns; removing the second mandrel patterns; patterning the second separation layer and the first mandrel layer to form first structures; forming a second spacer layer on the first structures and the first separation layer; anisotropically etching the second spacer layer to form second spacers on the first structures, and to form first dummy patterns and align key patterns on the first structures; and spin-coating a spin-on hard mask layer on the first separation layer, wherein the spin-on hard mask layer covers the first structures, the first dummy patterns and the align key patterns.

Abstract: Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-surface exposure is performed on the substrate on which the first photoresist pattern having a defect is formed. The first photoresist pattern is entirely removed by developing the first photoresist pattern, which has been subject to the entire-surface exposure. In addition, a second photoresist pattern is formed on the silicon oxide layer.