Patents by Inventor Seung Kyu HA

Seung Kyu HA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FILM SUBSTRATE, SEMICONDUCTOR PACKAGE INCLUDING THE FILM SUBSTRATE, AND METHOD USING THE SEMICONDUCTOR PACKAGE
    Publication number: 20240079311
    Abstract: A semiconductor package includes a film substrate; a wiring layer provided on the film substrate; and a semiconductor chip provided on the wiring layer and electrically connected to the wiring layer. The film substrate includes a first layer, wherein the first layer is an insulating layer having the wiring layer thereon. The film substrate further includes a second layer, wherein the second layer is attached to a bottom of the first layer and comprises a gas. The second layer is configured to be peeled off of the first layer.
    Type: Application
    Filed: August 1, 2023
    Publication date: March 7, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hyun CHO, Jeong-Kyu Ha, Jae-Min Jung
  • Nano-structure manufacturing method using sacrificial etching mask
    Patent number: 8895412
    Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: November 25, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Seung Kyu Ha, Su Youn Kim, Il Ki Han, Jin Dong Song, Won Jun Choi
  • NANO-STRUCTURE MANUFACTURING METHOD USING SACRIFICIAL ETCHING MASK
    Publication number: 20140030872
    Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.
    Type: Application
    Filed: November 5, 2012
    Publication date: January 30, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seung Kyu HA, Su Youn KIM, Il Ki HAN, Jin Dong SONG, Won Jun CHOI