Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Abstract: Disclosed is an organic light emitting display device including a substrate having a plurality of sub-pixel areas, a switching thin film transistor formed on each of the sub-pixel areas, a driving thin film transistor connected to the switching thin film transistor, a color filter formed on at least one of sub-pixel areas, an insulating layer formed on the switching thin film transistor, the driving thin film transistor and the color filter, a pixel electrode connected to the driving thin film transistor, an organic light emitting member formed on the pixel electrode, and a common electrode formed on the organic light emitting member. The insulating layer has a groove. The groove is formed along a boundary of the pixel electrode. The groove has a width of about 0.2 to about 4 ?m. The groove has a depth of about 0.2 to about 4 ?m. The pixel electrode has an edge declined in the groove.

Abstract: The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode.

Abstract: A method for manufacturing an organic light emitting diode display includes disposing a crystalline semiconductor layer on a substrate, disposing a gate line, a driving input electrode, and a driving output electrode on the crystalline semiconductor layer, the gate line including a switching control electrode, patterning the crystalline semiconductor layer using the gate line, the driving input electrode, and the driving output electrode as a mask, disposing a gate insulating layer and an amorphous semiconductor layer on the gate line, the driving input electrode, and the driving output electrode, disposing a data line, a driving voltage line, a switching output electrode, and a driving control electrode on the amorphous semiconductor, the data line including a switching input electrode, disposing a pixel electrode connected to the driving output electrode, disposing a light emitting member on the pixel electrode, and disposing a common electrode on the light emitting member.

Abstract: In one embodiment, an organic light emitting diode (OLED) display is provided. The OLED display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, a first thin film transistor connected to the first and second signal lines, a second thin film transistor connected to the first thin film transistor, a first electrode connected to the second thin film transistor, a second electrode provided at least partially opposite to the first electrode, and a light emitting member formed between the first electrode and the second electrode, wherein at least one of the first thin film transistor and the second thin film transistor includes a plurality of semiconductor layers having different crystallinity.

Abstract: A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.

Abstract: The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode.

Abstract: An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of the gate line and the data line, the light blocking member is formed under at least one of the gate line, the data line, and the driving voltage line, the switching TFT is connected to the gate line and the data line and includes an amorphous semiconductor, the driving TFT is connected to the switching TFT and includes a polycrystalline semiconductor, and the OLED is connected to the driving TFT.

Abstract: The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.

Abstract: The present invention provides a display panel of a flat panel display device of a four-color structure in which color mixture may not occur in a white sub-pixel and a method for fabricating the same. The display device includes first, second, third, and fourth sub-pixels, and each sub-pixel includes a thin film transistor. A color filter is formed adjacent to the thin film transistor of each of the first, second, and third sub-pixels, a planarization layer is formed on the color filters, and a pixel electrode is connected to each thin film transistor.

Abstract: The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.

Abstract: A display device includes a first switching transistor, a first driving transistor connected to the first switching transistor, a second switching transistor including an input terminal connected to an output terminal of the first switching transistor, a second driving transistor connected to the second switching transistor, and a pixel unit comprising a sub-pixel electrode connected to the first driving transistor and a main pixel electrode separated from the sub-pixel electrode and connected to the second driving transistor.

Abstract: A display device that lends itself to easy repair of a defective pixel is presented. The device includes: a thin film transistor formed having a first electrode and a second electrode, the second electrode having a first part facing the first electrode, a second part that protrudes from the first part and having a first width, and a third part that extends from the second part and having a second width which is different from the first width. The device also includes a wall encompassing the pixel electrode and a common electrode formed on the wall. In one version of the repairing process, the second part of the second electrode is coupled to the common electrode. This coupling causes electric current from the second electrode to flow to the common electrode instead of to a light emitting diode, thereby converting a white spot to a black spot.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. An organic light emitting device includes a first substrate, a thin film structure disposed on the first substrate, a second substrate comprising an inner surface and an outer surface, a first sealing member disposed between the first substrate and the second substrate, the first sealing member comprising an inner surface and an outer surface, and a second sealing member disposed on the outer surface of the second substrate.

Abstract: The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode.

Abstract: A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

Abstract: An organic light-emitting diode (“OLED”) display includes a first thin film transistor disposed on a substrate; a first insulating layer disposed on the first thin film transistor; a reflective electrode disposed on the first insulating layer; a common voltage line disposed on the first insulating layer and separated from the reflective electrode; a second insulating layer disposed on the reflective electrode and the common voltage line; a pixel electrode disposed on the second insulating layer and electrically connected to the first thin film transistor; an organic light-emitting member disposed on the pixel electrode; and a common electrode disposed on the organic light-emitting member, wherein the common voltage line is electrically connected to the common electrode.

Abstract: The present invention relates to a thin film transistor and a manufacturing method thereof. A thin film transistor according to an exemplary embodiment of the present invention includes: a first electrode arranged on a substrate; a second electrode arranged on the substrate and separated from the first electrode; a first ohmic contact arranged on an upper surface of the first electrode; a second ohmic contact arranged on an upper surface of the second electrode; a first buffer member covering a lateral surface of the first electrode and the second electrode; a semiconductor member contacted with an upper surface of the first buffer member, and the first ohmic contact and the second ohmic contact; an insulating layer arranged on the semiconductor member; and a third electrode arranged on the insulating layer, and disposed on the semiconductor member.

Abstract: The present invention relates to a modified CpG oligodeoxynucleotide (ODN) which is prepared by coupling a consecutive sequence of deoxyribothymine (dT) to the 3?-terminus of CpG ODN having immunoregularory function, thereby improving immunoactivity of splenocytes, macrophages and peripheral mononuclear cells, and therefore, can be effectively used as a vaccine adjuvant for preventing and treating hepatitis B or an anticancer agent. Since the phosphorothioate CpG ODN having the consecutive sequence of dT at its 3?-terminus shows high activity inducing Th-1 immune response and does not elicit in vivo toxicity with guaranteeing its safety, it can be effectively used as a vaccine adjuvant.

Abstract: A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.