Abstract: The present disclosure relates to an isolated anti-FcRN antibody, which is an antibody binding to FcRN (stands for neonatal Fc receptor, also called FcRP, FcRB or Brambell receptor) that is a receptor with a high affinity for IgG or a fragment thereof, a method of preparing thereof, a composition for treating autoimmune disease, which comprises the antibody, and a method of treating and diagnosing autoimmunre diseases using the antibody. The FcRn-specific antibody according to the present disclosure binds to FcRn non-competitively with IgG to reduce serum pathogenic auto-antibody levels, and thus can be used for the treatment of autoimmune diseases.

Abstract: Provided is a ceiling storage system capable of correcting a working position and constantly checking stability of a structure by detecting an amount of change in a facility. According to the ceiling storage system, a transport vehicle moves to an upper portion of a first storage area of a plurality of storage areas in a state of gripping an article, and the transport vehicle measures a first distance value between the transport vehicle and the first storage area using a distance sensor and measures a relative position value between the transport vehicle and the first storage area using a vision sensor, before unloading the article from the first storage area.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.

Abstract: Provided are methods of surface treatment, semiconductor devices and methods of forming the semiconductor device. The methods of forming the semiconductor device include forming a first oxide layer and a second oxide layer on a substrate. The first and second oxide layers are patterned to form a contact hole exposing the substrate. A sidewall of the first oxide layer exposed by the contact hole reacts with HF to form a first reaction layer and a sidewall of the second oxide layer exposed by the contact hole reacts with NH3 and HF to form a second reaction layer. The first and second reaction layers are removed to enlarge the contact hole. A contact plug is formed in the enlarged contact hole.