Patents by Inventor SEUNGKYUNG RO
SEUNGKYUNG RO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11322206Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.Type: GrantFiled: September 29, 2020Date of Patent: May 3, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jinwoo Hong, Chanha Kim, Kangho Roh, Seungkyung Ro, Yunjung Lee, Heewon Lee
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Publication number: 20210166764Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.Type: ApplicationFiled: September 29, 2020Publication date: June 3, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jinwoo Hong, Chanha Kim, Kangho Roh, Seungkyung Ro, Yunjung Lee, Heewon Lee
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Patent number: 11004517Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.Type: GrantFiled: March 18, 2019Date of Patent: May 11, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yunjung Lee, Chanha Kim, Suk-eun Kang, Seungkyung Ro, Kwangwoo Lee, Juwon Lee, Jinwook Lee, Heewon Lee
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Patent number: 10802728Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.Type: GrantFiled: May 20, 2019Date of Patent: October 13, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwangwoo Lee, Chanha Kim, Yunjung Lee, Jisoo Kim, Seungkyung Ro, Jinwook Lee, Heewon Lee
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Publication number: 20200110547Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.Type: ApplicationFiled: May 20, 2019Publication date: April 9, 2020Inventors: KWANGWOO LEE, CHANHA KIM, YUNJUNG LEE, JISOO KIM, SEUNGKYUNG RO, JINWOOK LEE, HEEWON LEE
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Publication number: 20200058359Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.Type: ApplicationFiled: March 18, 2019Publication date: February 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Yunjung Lee, Chanha Kim, Suk-eun Kang, Seungkyung Ro, Kwangwoo Lee, Juwon Lee, Jinwook Lee, Heewon Lee
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Patent number: 10424388Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.Type: GrantFiled: June 7, 2017Date of Patent: September 24, 2019Assignee: Samsung ELectronics Co., Ltd.Inventors: Hyunkyo Oh, Seungkyung Ro, Heewon Lee, Seongnam Kwon, Oak-Ha Kim, Donggi Lee
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Patent number: 10216422Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.Type: GrantFiled: June 27, 2017Date of Patent: February 26, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Chanha Kim, Hyunkyo Oh, Oak-Ha Kim, Seungkyung Ro, Jong-Nam Baek, Donggi Lee, Jinwook Lee, Heewon Lee
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Patent number: 10049755Abstract: A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes multiple memory blocks, each of which includes memory cells. The controller reads data from selected memory cells of a memory block selected from the memory blocks during a read operation. The selected memory cells correspond to both a word line and a string selection line selected as a read target. The controller increases a read count by a read weight corresponding to the selected word line and string selection line of the selected memory block, and performs a refresh operation on the selected memory cells if the read count reaches a threshold value. In the selected memory block, two or more read weights are assigned according to locations of the string selection lines and the word lines.Type: GrantFiled: February 3, 2017Date of Patent: August 14, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Heewon Lee, Sari Go, Seungkyung Ro, Seongnam Kwon
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Patent number: 10013211Abstract: A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.Type: GrantFiled: May 25, 2017Date of Patent: July 3, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Donghwan Lee, Junjin Kong, Seongnam Kwon, Seungkyung Ro, Changkyu Seol, Hong Rak Son, Pilsang Yoon, Donggi Lee, Heewon Lee
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Publication number: 20180143762Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.Type: ApplicationFiled: June 27, 2017Publication date: May 24, 2018Inventors: Chanha KIM, Hyunkyo OH, Oak-Ha KIM, Seungkyung RO, Jong-Nam BAEK, Donggi LEE, Jinwook LEE, Heewon LEE
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Publication number: 20180108422Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.Type: ApplicationFiled: June 7, 2017Publication date: April 19, 2018Inventors: HYUNKYO OH, SEUNGKYUNG RO, HEEWON LEE, SEONGNAM KWON, OAK-HA KIM, DONGGI LEE
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Publication number: 20180067697Abstract: A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.Type: ApplicationFiled: May 25, 2017Publication date: March 8, 2018Inventors: Donghwan Lee, Junjin Kong, Seongnam Kwon, Seungkyung Ro, Changkyu Seol, Hong Rak Son, Pilsang Yoon, Donggi Lee, Heewon Lee
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Publication number: 20180004415Abstract: A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes multiple memory blocks, each of which includes memory cells. The controller reads data from selected memory cells of a memory block selected from the memory blocks during a read operation. The selected memory cells correspond to both a word line and a string selection line selected as a read target. The controller increases a read count by a read weight corresponding to the selected word line and string selection line of the selected memory block, and performs a refresh operation on the selected memory cells if the read count reaches a threshold value. In the selected memory block, two or more read weights are assigned according to locations of the string selection lines and the word lines.Type: ApplicationFiled: February 3, 2017Publication date: January 4, 2018Inventors: HEEWON LEE, SARI GO, SEUNGKYUNG RO, SEONGNAM KWON
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Patent number: 9646704Abstract: An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.Type: GrantFiled: July 15, 2015Date of Patent: May 9, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Sangkwon Moon, Sung-Hwan Bae, Seungkyung Ro
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Patent number: 9589640Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.Type: GrantFiled: January 8, 2016Date of Patent: March 7, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangkwon Moon, Sang-Hwa Han, Seungkyung Ro
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Publication number: 20160203870Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.Type: ApplicationFiled: January 8, 2016Publication date: July 14, 2016Inventors: SANGKWON MOON, SANG-HWA HAN, SEUNGKYUNG RO
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Publication number: 20160133329Abstract: An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.Type: ApplicationFiled: July 15, 2015Publication date: May 12, 2016Inventors: SANGKWON MOON, SUNG-HWAN BAE, SEUNGKYUNG RO