Abstract: A display device includes a light emitting element on a substrate and that generates light of a preset color and a color conversion layer on the light emitting element and including a first quantum dot that exhibits a first absorption peak in a UV-vis absorption spectrum and a second quantum dot that is different from the first quantum dot and does not exhibit a first absorption peak in a UV-vis absorption spectrum.

Abstract: The present invention relates to a dental 3Y-TZP zirconia material whose surface is modified by plasma treatment, an implant and a manufacturing method thereof. The 3Y-TZP zirconia material and implant manufactured according to the present invention have improved cell adhesion and antibacterial effects, thereby improving biocompatibility and minimizing inflammatory reactions of the user.

Abstract: The present invention relates to a dental 3Y-TZP zirconia material whose surface is modified by plasma treatment, an implant and a manufacturing method thereof. The 3Y-TZP zirconia material and implant manufactured according to the present invention have improved cell adhesion and antibacterial effects, thereby improving biocompatibility and minimizing inflammatory reactions of the user.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

Abstract: A method of manufacturing a window may include cutting a window having a uniform thickness of about 20 ?m to about 100 ?m and polishing a cut surface of the window with a polishing pad having an elastic modulus less than an elastic modulus of the window while applying slurry to the cut surface of the window.

Abstract: A power supply system may include a target device and an adapter. The target device may include an adapter connection switch that receives adapter recognition information to form a connection with the adapter, a voltage detection unit that receives an output voltage from an adapter, and a voltage-change-requesting unit that outputs a voltage to request a voltage change based on information on the output voltage from the adapter. The adapter may include a device information recognition unit that receives the voltage to request a voltage change, and an output-voltage-changing unit that changes the output voltage based on the voltage to request a voltage change.

Abstract: A structure of a flap part for covering a rail part when opening a sliding door of a vehicle, includes a door flap part including an installation hole, a door flap guide, door trim flap links, elastic members, and a flap, wherein the sliding door is supported by a roller arm, and the rail part, which is externally exposed when the sliding door is opened, is covered by the flap part, and wherein at a time of opening the door, a roller provided on the roller arm comes into contact with a door flap guide and pushes the door flap guide to ensure a movement space for the roller arm.

Abstract: An embodiment opening and closing apparatus of a sliding door of a vehicle includes a carrier slidably installed along a lengthwise direction of the vehicle, a pair of links rotatably installed on the carrier and spaced apart from each other, wherein a first end portion of the pair of links is hinge-connected to the sliding door of the vehicle, and a popping-out device configured to pop the sliding door out of a vehicle body of the vehicle by rotating the pair of links during an initial stage of an opening operation of the sliding door.

Abstract: A storage device may determine write throughput based on a plurality of write commands received from the outside of the storage device, and write target data write-requested from the outside to a first memory area including one or more of a plurality of first type memory blocks or a second memory area including one or more of a second type memory blocks according to whether the write throughput is greater than or equal to a threshold throughput. The first type memory blocks may operate at a higher speed than the second type memory blocks.

Abstract: A storage device may load, between a first time point at which information on candidate memory regions among a plurality of memory regions is started to be sent to an external device and a second time point at which a command requesting a map segment for a target memory region among the plurality of memory regions is received from the external device, all or a part of map segments corresponding to the candidate memory regions into a buffer.

Abstract: An electrolyte solution for a lithium secondary battery and a lithium secondary battery including the same are disclosed herein. In some embodiments, an electrolyte solution includes a lithium salt, an additive including a compound represented by Formula 1, and an organic solvent. In some embodiments, the lithium secondary battery includes a positive electrode, a negative electrode which includes a negative electrode active material containing SiOx (0<x?2), a separator, and the electrolyte solution.

Abstract: A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.

Abstract: A wireless communication method and apparatus in a wireless local area network (WLAN) system are disclosed. A wireless communication method according to one embodiment may include generating a high-efficiency Wi-Fi (HEW) frame including at least one of an HEW-SIG-A field and an HEW-SIG-B field which include channel information for communications according to an Orthogonal Frequency-Division Multiple Access (OFDMA) mode, and transmitting the generated HEW frame to a reception apparatus.

Abstract: A vehicular folding-type loading bay cover includes a cover unit with a plurality of slats. Respective upper end portions of preceding and following slats and respective lower end portions thereof are alternatingly connected, and the cover unit can be folded and unfolded in a loading bay of a vehicle. A main rail is disposed in the vehicular loading bay along a direction in which the cover unit is unfolded, guides the lower end portions of the slats, and guides the upper end portions of the slats in a section where the slats are unfolded. A guide rail branches off from the main rail, is parallel with the main rail in a section where the cover unit is fully folded and guides the upper end portions of the slats when the cover unit is folded.

Abstract: A printed circuit board includes a glass layer, a through-hole penetrating through the glass layer, a seed layer provided along an inner wall of the through-hole, and a through-via disposed on the seed layer and filling the through-hole. The seed layer includes a carbon-based conductive material.

Abstract: A real wood sheet capable of being used for automatic wrapping, the real wood sheet including a wood layer; a mesh layer disposed on a surface of the wood layer; and a flexible layer disposed on a surface of the mesh layer such that the mesh layer is disposed between the wood layer and the flexible layer.

Abstract: The electronic wave leakage measurement system according to the present invention is a system for measuring the electronic wave leakage of an electronic wave shielding structure. The system comprising a signal generator for generating an electronic wave generation signal; a transmitting antenna for transmitting the electronic wave towards a wall surface of the electronic wave shielding structure by receiving the signal from the signal generator; a receiving antenna capable of beam steering and comprising N individual antenna modules for receiving the electronic wave that has passed through the wall surface of the electronic wave shielding structure; and a signal analyzer that analyzes and displays the received electronic wave signal from the receiving antenna.

Abstract: A semiconductor chip includes a semiconductor device connected between a first node to which a power supply voltage is applied and a second node to which a ground voltage is applied, a first ring oscillator connected to the first node through a first supply switch and the second node through a first ground switch and a second ring oscillator connected to the first node through a second supply switch and the second node through a second ground switch, wherein the first supply and ground switches are configured to operate in response to a first control signal, thereby operating the first ring oscillator, and the second supply and ground switches are configured to operate in response to a second control signal, thereby operating the second ring oscillator.

Abstract: The present invention relates to a method for producing ?? T cells. According to the present invention, ?? T cells with high cell killing ability and cell viability can be produced in a short period of time with high purity and high efficiency by a clinically friendly method, compared to conventionally known general ?? T cell culture methods or culturing methods using support cells, and thus, there is the advantage of increasing the productivity of allogeneic ?? T cell immunotherapeutic agents.

Abstract: A dielectric composition according to the present disclosure includes dielectric grains containing barium titanate-based compounds; and a secondary phase located between the dielectric grains, and the secondary phase includes a first secondary phase including Ga and Si. A multilayered capacitor includes a capacitor body including a dielectric layer and an internal electrode; and an external electrode disposed outside the capacitor body. The dielectric layer includes the dielectric composition according to the present disclosure.