Abstract: A method of fabricating a semiconductor device includes forming a conductive layer on an insulating layer having a plurality of trenches on a semiconductor substrate, such that the conductive layer fills in the plurality of trenches formed in the insulating layer, and calculating a target eddy current value to measure an end point using parameters of a pattern density and a depth of the trenches. The method further includes planarizing the conductive layer and measuring eddy current values on the conductive layer using an eddy current monitoring system, and stopping the planarization when the measured eddy current value reaches the target eddy current value to form a planarized conductive layer having a target height on the insulating layer.

Abstract: A method of fabricating a semiconductor device includes forming a conductive layer on an insulating layer having a plurality of trenches on a semiconductor substrate, such that the conductive layer fills in the plurality of trenches formed in the insulating layer, and calculating a target eddy current value to measure an end point using parameters of a pattern density and a depth of the trenches. The method further includes planarizing the conductive layer and measuring eddy current values on the conductive layer using an eddy current monitoring system, and stopping the planarization when the measured eddy current value reaches the target eddy current value to form a planarized conductive layer having a target height on the insulating layer.

Abstract: A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.

Abstract: A slurry for chemical mechanical polishing (CMP) of a refractory metal based barrier film includes a plurality of composite particles and at least one selective adsorption additive, such as a surfactant or a polymer. The composite particles have an inorganic core surrounded by the selective adsorption additive. The refractory metal based barrier film does not substantially adsorb the selective adsorption additive surfactant, while other exposed films substantially adsorb the surfactant. A method for chemical mechanical polishing (CMP) a refractory metal based barrier film includes the steps of providing a slurry including a plurality of composite particles and at least one selective adsorption additive.

Abstract: A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.